5秒后页面跳转
GD150HFX170C2S PDF预览

GD150HFX170C2S

更新时间: 2024-09-24 17:01:35
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
9页 183K
描述
C2.0-Half Bridge

GD150HFX170C2S 数据手册

 浏览型号GD150HFX170C2S的Datasheet PDF文件第2页浏览型号GD150HFX170C2S的Datasheet PDF文件第3页浏览型号GD150HFX170C2S的Datasheet PDF文件第4页浏览型号GD150HFX170C2S的Datasheet PDF文件第5页浏览型号GD150HFX170C2S的Datasheet PDF文件第6页浏览型号GD150HFX170C2S的Datasheet PDF文件第7页 
GD150HFX170C2S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD150HFX170C2S  
1700V/150A 2 in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
general inverters and UPS.  
Features  
Low VCE(sat) Trench IGBT technology  
10μs short circuit capability  
V
CE(sat) with positive temperature coefficient  
Maximum junction temperature 175oC  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Typical Applications  
Inverter for motor drive  
AC and DC servo drive amplifier  
Uninterruptible power supply  
Equivalent Circuit Schematic  
©2019 STARPOWER Semiconductor Ltd.  
3/15/2019  
1/9  
preliminary  

与GD150HFX170C2S相关器件

型号 品牌 获取价格 描述 数据表
GD150HFX65C1S STARPOWER

获取价格

C1.0-Half Bridge
GD150HFY120C1S STARPOWER

获取价格

C1.0-Half Bridge
GD150HFY120C2S STARPOWER

获取价格

C2.0-Half Bridge
GD150HFY120C6S STARPOWER

获取价格

C6.1-Half Bridge
GD150HFY120C8SN STARPOWER

获取价格

C8.1-Half Bridge
GD150HHU120C6S STARPOWER

获取价格

C6.4.full bridge
GD150HTT120C7S_G8 STARPOWER

获取价格

C7.0.Tri-Pack
GD150HTT170C7S STARPOWER

获取价格

C7.0.Tri-Pack
GD150MLL120C2S STARPOWER

获取价格

C2.4.3-level
GD150MLT120B3S STARPOWER

获取价格

B3.2.3-level