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GD150HTT170C7S PDF预览

GD150HTT170C7S

更新时间: 2024-04-09 19:00:57
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
9页 501K
描述
C7.0.Tri-Pack

GD150HTT170C7S 数据手册

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GD150HTT170C7S  
IGBT Module  
STARPOWER  
SEMICONDUCTORTM  
IGBT  
GD150HTT170C7S  
Molding Type Module  
1700V/150A 6 in one-package  
General Description  
STARPOWER IGBT power module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
general inverters and UPS.  
Features  
Low VCE(sat) Trench IGBT technology  
Low switching losses  
Maximum junction temperature 175  
10μs short circuit capability  
Square RBSOA  
V
CE(sat) with positive temperature coefficient  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Typical Applications  
Inverter for motor drive  
AC and DC servo drive amplifier  
Uninterruptible power supply  
©2010 STARPOWER Semiconductor Ltd.  
11/12/2010  
1/9  
Rev.A