5秒后页面跳转
GD150MLT120B3S PDF预览

GD150MLT120B3S

更新时间: 2024-04-09 19:01:45
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
6页 301K
描述
B3.2.3-level

GD150MLT120B3S 数据手册

 浏览型号GD150MLT120B3S的Datasheet PDF文件第2页浏览型号GD150MLT120B3S的Datasheet PDF文件第3页浏览型号GD150MLT120B3S的Datasheet PDF文件第4页浏览型号GD150MLT120B3S的Datasheet PDF文件第5页浏览型号GD150MLT120B3S的Datasheet PDF文件第6页 
GD150MLT120B3S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD150MLT120B3S  
Molding Type Module  
1200V/150A 3-level in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
3-level applications.  
Features  
Low VCE(sat) Trench IGBT technology  
10μs short circuit capability  
VCE(sat) with positive temperature coefficient  
Maximum junction temperature 175  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Typical Applications  
3-level applications  
Solar power  
UPS  
©2011 STARPOWER Semiconductor Ltd.  
5/31/2011  
1/6  
Preliminary