Datasheet > GD150HFT170C2S

GD150HFT170C2S

更新时间： 2024-04-09 18:59:50

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
8页	427K
描述
C2.0.Half Bridge

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GD150HFT170C2S 数据手册

GD150HFT170C2S

IGBT Module

STARPOWER

SEMICONDUCTOR

IGBT

GD150HFT170C2S

Molding Type Module

1700V/150A 2 in one-package

General Description

STARPOWER IGBT Power Module provides ultra

low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as

AC inverters.

Features



Low V_CE(sat)trench IGBT technology

Low switching losses

10μs short circuit capability

V_CE(sat)with positive temperature coefficient

Low inductance case

Fast & soft reverse recovery anti-parallel FWD

Isolated copper baseplate using DBC technology

Equivalent Circuit Schematic

Typical Applications



AC inverter drives mains 575-750V AC

Public transport (auxiliary syst.)

Absolute Maximum Ratings T_C=25℃ unless otherwise noted

Symbol

V_CES

Description

GD150HFT170C2S

Units

Collector-Emitter Voltage

1700

7/22/2013

1/8

Rev.C

12 3 4 5 6 7 8

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