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GD150HFU120C8S PDF预览

GD150HFU120C8S

更新时间: 2024-04-09 19:01:27
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
9页 184K
描述
C8.0.Half Bridge

GD150HFU120C8S 数据手册

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GD150HFU120C8S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD150HFU120C8S  
1200V/150A 2 in one-package  
General Description  
STARPOWER IGBT Power Module provides ultrafast  
switching speed as well as short circuit ruggedness.  
It’s designed for the applications such as electronic  
welder and inductive heating.  
Features  
NPT IGBT technology  
10μs short circuit capability  
Low switching losses  
Rugged with ultrafast performance  
V
CE(sat) with positive temperature coefficient  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Typical Applications  
Switching mode power supply  
Inductive heating  
Electronic welder  
Equivalent Circuit Schematic  
©2015 STARPOWER Semiconductor Ltd.  
3/7/2015  
1/9  
DX01  

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