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GD150HFL120C2S PDF预览

GD150HFL120C2S

更新时间: 2022-04-08 14:05:59
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GD150HFL120C2S 数据手册

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GD150HFL120C2S  
IGBT Module  
STARPOWER  
SEMICONDUCTORTM  
IGBT  
GD150HFL120C2S  
Molding Type Module  
1200V/150A 2 in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
Low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
general inverters.  
Features  
z
z
z
z
z
z
High short circuit capability, self limiting to 6*IC  
10μs short circuit capability  
VCE(sat) with positive temperature coefficient  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Equivalent Circuit Schematic  
Typical Applications  
z
z
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AC inverter drives  
Switching mode power supplies  
Electronic welders  
Absolute Maximum Ratings TC=25unless otherwise noted  
Symbol  
VCES  
Description  
GD150HFL120C2S  
Units  
Collector-Emitter Voltage  
1200  
V
©2011 STARPOWER Semiconductor Ltd.  
2/11/2011  
1/8  
Rev.C  

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