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GCQ20A04 PDF预览

GCQ20A04

更新时间: 2024-11-23 22:41:03
品牌 Logo 应用领域
NIEC 二极管
页数 文件大小 规格书
2页 34K
描述
Low Forward Voltage drop Diode

GCQ20A04 数据手册

 浏览型号GCQ20A04的Datasheet PDF文件第2页 
SBD T y p e : GCQ20A04  
OUTLINE DRAWING  
FEATURES  
*Similar to TO-220AB Case  
*Dual Diodes – Cathode Common  
*Low Forward Voltage Drop  
*High Surge Capability  
*Tj=150 °C operation  
Maximum Ratings  
Approx Net Weight: 1.9g  
GCQ20A04  
Rating  
Symbol  
VRRM  
IO  
IF(RMS)  
IFSM  
Unit  
V
Repetitive Peak Reverse Voltage  
40  
50 Hz Full Sine Wave  
Resistive Load  
Average Rectified Output Current  
RMS Forward Current  
20  
Tc=119°C  
A
A
A
22.2  
50Hz Full Sine Wave ,1cycle  
Non-repetitive  
Surge Forward Current  
180  
Operating JunctionTemperature Range  
Storage Temperature Range  
Mounting torque  
Tjw  
Tstg  
Ftor  
-40 to +150  
-40 to +150  
recommended torque = 0.5  
°C  
°C  
Nm  
Electrical Thermal Characteristics  
Characteristics  
Peak Reverse Current  
Symbol  
IRM  
Conditions  
Min. Typ. Max. Unit  
Tj= 25°C, VRM= VRRM  
per arm  
Tj= 25°C, IFM= 10 A  
per arm  
-
-
10  
mA  
V
Peak Forward Voltage  
Thermal Resistance  
VFM  
-
-
-
-
0.55  
Rth(j-c) Junction to Case  
1.5 °C /W  

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