Datasheet > GCQ20A06

GCQ20A06

更新时间： 2024-11-26 21:55:15

品牌	Logo	应用领域
NIEC		肖特基二极管
页数	文件大小	规格书
6页	57K
描述
Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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GCQ20A06 数据手册

SBD T y p e : GCQ20A06

OUTLINE DRAWING

FEATURES

*Similar to TO-220AB Case

*Dual Diodes – Cathode Common

*Low Forward Voltage Drop

*High Surge Capability

*Tj=150 °C operation

Maximum Ratings

Approx Net Weight: 1.9g

GCQ20A06

Rating

Symbol

V_RRM

I_O

I_F(RMS)

I_FSM

Unit

Repetitive Peak Reverse Voltage

50 Hz Full Sine Wave

Resistive Load

Average Rectified Output Current

RMS Forward Current

Tc=111°C

22.2

50Hz Full Sine Wave ,1cycle

Non-repetitive

Surge Forward Current

150

Operating JunctionTemperature Range

Storage Temperature Range

Mounting torque

T_jw

T_stg

Ftor

-40 to +150

recommended torque = 0.5

°C

N•m

Electrical • Thermal Characteristics

Characteristics

Peak Reverse Current

Symbol

I_RM

Conditions

Min. Typ. Max. Unit

Tj= 25°C, V_RM= V_RRM

per arm

Tj= 25°C, I_FM= 10 A

per arm

Peak Forward Voltage

Thermal Resistance

V_FM

0.65

Rth(j-c) Junction to Case

1.5 °C /W

12 3 4 5 6

中文翻译

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