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GBU804 PDF预览

GBU804

更新时间: 2024-11-18 10:41:07
品牌 Logo 应用领域
EIC 整流二极管桥式整流二极管局域网
页数 文件大小 规格书
2页 52K
描述
Glass Passivated

GBU804 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
Reach Compliance Code:compliant风险等级:5.61
Is Samacsys:N最小击穿电压:400 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
最大非重复峰值正向电流:200 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED参考标准:TS 16949
最大重复峰值反向电压:400 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

GBU804 数据手册

 浏览型号GBU804的Datasheet PDF文件第2页 
Glass Passivated  
Single-Phase Bridge Rectifiers  
GBU8005 ~ GBU810  
PRV : 50 - 1000 Volts  
Io : 8.0 Amperes  
0.187 (4.7)  
0.148 (3.8)  
0.88 (22.3)  
0.86 (21.8)  
9o Typ.  
0.310 (7.9)  
0.290 (7.4)  
FEATURES :  
* Surge overload rating - 200 Amperes peak  
* Ideal for printed circuit boards  
* Reliable low cost construction utilizing  
molded plastic technique  
0.085 (2.16)  
0.065 (1.65)  
~ ~ +  
0.060 (1.52)  
0.045 (1.14)  
0.100 (2.54)  
0.850 (2.16)  
* Plastic material has Underwriters Laboratory  
Flammability Classification 94V-0  
* Mounting Position : Any  
0.080 (2.03)  
0.065 (1.65)  
* Pb / RoHS Free  
0.210 0.210 0.210  
0.190 0.190 0.190  
(5.33) (5.33) (5.33)  
(4.83) (4.83) (4.83)  
Dimensions in inches and ( millimeter )  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
GBU GBU GBU GBU GBU GBU GBU  
SYMBOL  
UNIT  
RATING  
8005 801  
802  
804  
806  
808  
800 1000  
560 700  
800 1000  
810  
VRRM  
VRMS  
VDC  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
400  
600  
V
V
V
140  
200  
280  
400  
8.0  
3.2  
420  
600  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward  
(with heatsink note2)  
(without heatsink )  
IF(AV)  
A
Output Current Tc=100°C  
Peak Forward Surge Current, 8.3ms Single half sine-  
wave Superimposed on rated load (JEDEC Method)  
Rating for fusing ( t < 8.3 ms. )  
IFSM  
200  
A
I2t  
VF  
IR  
A2S  
V
166  
Maximum Instantaneous Forward Voltage at IF = 4 A  
1.0  
5.0  
500  
60  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
TJ = 25 °C  
mA  
IR(H)  
CJ  
TJ = 100 °C  
Typical Junction capacitance per element (Note1)  
Typical Thermal Resistance (Note 2)  
Operating Junction Temperature Range  
Storage Temperature Range  
pF  
°C/W  
°C  
RqJC  
TJ  
2.2  
- 50 to + 150  
- 50 to + 150  
TSTG  
°C  
Notes :  
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC  
(2) Device mounted on 100mm x 100mm x 1.6mm Cu. Plate heatsink.  
Page 1 of 2  
Rev. 02 : March 25, 2005  

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