5秒后页面跳转
GBU806 PDF预览

GBU806

更新时间: 2024-02-07 02:49:29
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
2页 70K
描述
8.0A GLASS PASSIVATED BRIDGE RECTIFIER

GBU806 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
Base Number Matches:1

GBU806 数据手册

 浏览型号GBU806的Datasheet PDF文件第2页 
GBU8005 - GBU810  
8.0A GLASS PASSIVATED BRIDGE RECTIFIER  
Features  
·
·
·
·
·
·
Glass Passivated Die Construction  
High Case Dielectric Strength of 1500VRMS  
Low Reverse Leakage Current  
GBU  
Surge Overload Rating to 200A Peak  
Ideal for Printed Circuit Board Applications  
DimMin  
Max  
21.8  
A
B
C
D
E
G
H
J
22.3  
4.1  
A
B
K
Plastic Material: UL Flammability  
Classification Rating 94V-0  
M
3.5  
7.4  
7.9  
C
·
UL Listed Under Recognized Component  
Index, File Number E94661  
1.65  
2.25  
1.02  
4.83  
17.5  
2.16  
2.75  
1.27  
5.33  
18.0  
L
J
D
+
~ ~  
-
Mechanical Data  
E
F
·
·
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
N
K
L
3.2 X 45°  
G
18.3  
3.30  
0.46  
0.76  
18.8  
3.56  
0.56  
1.0  
·
·
·
·
·
Polarity: Marked on Body  
M
N
P
P
Mounting: Through Hole for #6 Screw  
Mounting Torque: 5.0 Inch-pounds Maximum  
Marking: Date Code and Type Number  
Weight: 6.6 grams (approx.)  
H
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
GBU  
8005  
GBU  
801  
GBU  
802  
GBU  
804  
GBU  
806  
GBU  
808  
GBU  
810  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
35  
280  
8.0  
V
A
Average Rectified Output Current (Note 1) @ TC = 100°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
200  
1.0  
A
Forward Voltage (per element)  
@ IF = 4.0A  
VFM  
IR  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@TC = 25°C  
@ TC = 125°C  
5.0  
500  
mA  
I2t Rating for Fusing (t < 8.3ms) (Note 2)  
I2t  
CJ  
166  
130  
A2s  
pF  
Typical Junction Capacitance per Element (Note 3)  
Typical Thermal Resistance Junction to Case (Note 1)  
Operating and Storage Temperature Range  
RqJC  
Tj, TSTG  
2.2  
°C/W  
°C  
-55 to +150  
Notes:  
1. United mounted on 50 x 50 x 1.6mm copper plate heatsink.  
2. Non-repetitive, for t > 1.0ms and < 8.3ms.  
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
DS21227 Rev. D-2  
1 of 2  
GBU8005-GBU810  

与GBU806相关器件

型号 品牌 描述 获取价格 数据表
GBU8-06 FRONTIER 8A SILICON SINGLE-PHASE BRIDGE RECTIFIERS

获取价格

GBU806(LS) DIODES 8A GLASS PASSIVATED BRIDGE RECTIFIER

获取价格

GBU806A YANGJIE Bridge Rectifier Diode, 1 Phase, 3.2A, 600V V(RRM), Silicon,

获取价格

GBU806AB1 YANGJIE Bridge Rectifier Diode, 1 Phase, 3.2A, 600V V(RRM), Silicon,

获取价格

GBU806C HY SILICON BRIDGE RECTIFIERS

获取价格

GBU806C2 TSC Glass Passivated Single-Phase Bridge Rectifier

获取价格