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GBU6B-E3 PDF预览

GBU6B-E3

更新时间: 2024-01-15 21:46:57
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 308K
描述
DIODE 3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode

GBU6B-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.06其他特性:UL RECOGNIZED
最小击穿电压:100 V外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PSFM-T4JESD-609代码:e3
最大非重复峰值正向电流:175 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

GBU6B-E3 数据手册

 浏览型号GBU6B-E3的Datasheet PDF文件第2页浏览型号GBU6B-E3的Datasheet PDF文件第3页浏览型号GBU6B-E3的Datasheet PDF文件第4页 
GBU6A thru GBU6M  
Vishay General Semiconductor  
Glass Passivated Single-Phase Bridge Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
6 A  
50 V to 1000 V  
175 A  
Case Style GBU  
5 µA  
VF  
1.0 V  
Tj max.  
150 °C  
Features  
Mechanical Data  
• UL Recognition file number E54214  
• Ideal for printed circuit boards  
• High surge current capability  
Case: GBU  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
• High case dielectric strength of 1500 V  
• Solder Dip 260 °C, 40 seconds  
RMS  
Polarity: As marked on body  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
Typical Applications  
General purpose use in ac-to-dc bridge full wave rec-  
tification for Monitor, TV, Printer, Switching Mode  
Power Supply, Adapter, Audio equipment, and Home  
Appliances applications.  
Maximum Ratings  
TA = 25 °C, unless otherwise specified  
Parameter  
Symbols GBU6A GBU6B GBU6D GBU6G GBU6J GBU6K GBU6M Units  
Maximum repetitive peak  
reverse voltage  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
V
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
V
Maximum DC blocking  
voltage  
100  
1000  
C = 90 °C(1)  
TA = 25 °C(1)  
Maximum average forward  
rectified output current at  
(Fig. 1)  
IF(AV)  
A
A
6.0  
3.0  
T
Peak forward surge current  
single sine-wave  
IFSM  
175  
superimposed on rated load  
I2t  
A2sec  
°C  
Rating for fusing (t < 8.3 ms)  
127  
Operating junction and  
TJ, TSTG  
- 55 to + 150  
storage temperature range  
Note:  
(1) Unit case mounted on AI plate heatsink  
Document Number 88615  
29-Jul-05  
www.vishay.com  
1

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