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GBU6D

更新时间: 2024-01-24 12:35:18
品牌 Logo 应用领域
平伟 - PINGWEI 二极管IOT局域网
页数 文件大小 规格书
1页 41K
描述
GLASS PASSIVATED BRIDGE RECTIFIER

GBU6D 技术参数

生命周期:Active包装说明:R-PSFM-T4
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:8 weeks风险等级:5.56
Is Samacsys:N其他特性:HIGH RELIABILITY, UL RECOGNIZED
最小击穿电压:1000 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-T4最大非重复峰值正向电流:175 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:6 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:1000 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

GBU6D 数据手册

  
CHONGQING PINGYANG ELECTRONICS CO.,LTD.  
GBU6A THRU GBU6K  
GLASS PASSIVATED BRIDGE RECTIFIER  
VOLTAGE50-800V  
CURRENT6.0A  
GBU  
FEATURES  
·Low leakage  
·Low forward voltage  
·Surge overload ratings-175 Amperes  
MECHANICAL DATA  
·Case: Molded plastic  
·Epoxy: UL 94V-0 rate flame retardant  
·Lead: MIL-STD- 202E, Method 208 guaranteed  
·Polarity: Symbols molded or marked on body  
·Mounting position: Any  
Dimensions in inches and (millimeters)  
·Weight: 6.6 grams  
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS  
Ratings at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
GBU6A GBU6B GBU6D GBU6G GBU6J GBU6K units  
SYMBOL  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Bridge Input Voltage  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward rectified Output  
Current at TC=75°C  
Io  
6.0  
A
A
V
Peak Forward Surge Current 8.3ms single half  
sine-wave superimposed on rate load (JEDEC  
method)  
IFSM  
175  
Maximum Forward Voltage Drop per element at  
3.0 A DC  
VF  
1.0  
5.0  
500  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
per element  
@ TA=25°C  
IR  
µA  
@ TA=125°C  
I2t  
CJ  
240  
60  
A2S  
pF  
I2t Rating for Fusing (t<8.3ms)  
Typical Junction Capacitance per Element(Note 1)  
Typical Thermal Resistance, Junction to Case  
(Note 2)  
RθJA  
2.7  
°C/W  
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
2. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.  
PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn  

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