RoHS
GBU25 Series RoHS
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)
A
GBU25
J
PARAMETER
UNIT
SYMBOL
D
G
K
M
VRRM
VRSM
200
300
200
400
500
400
600
700
600
25
800
900
800
1000
1100
1000
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
V
V
V
A
Maximum DC blocking voltage
VDC
IF(AV)
Maximum average forward rectified output current, Tc = 85°C
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
A
350
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
A2s
I2t
508
VISO
TJ
2500
RMS isolation voltage from case to leads
V
Operating junction storage temperature range
-40 to 150
ºC
ºC
TSTG
-40 to 150
Storage temperature range
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
GBU25
J
TEST
CONDITIONS
UNIT
PARAMETER
SYMBOL
D
G
K
M
VF
IR
IF = 12.5A
Maximum instantaneous forward drop per diode
1.10
5
V
Maximum reverse DC current at rated DC blocking
voltage per diod
TA = 25°C
µA
TA = 150°C
500
THERMAL AND MECHANICAL (T = 25°C unless otherwise noted)
A
GBU25
J
UNIT
PARAMETER
TEST CONDITIONS
SYMBOL
D
G
K
M
Typical thermal resistance
junction to case
Single-side heat dissipation, sine
half wave
(1)
RθJC
1.0
°C/W
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
Mounting
.
N m
0.8
4.0
torque
to heatsink M3
± 10 %
Approximate weight
g
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
Ordering Information Tabel
Device code
GBU 25
K
3
1
2
-
-
-
Product type : “GBU” Package,1Ø Bridge
IF(AV) rating : "25" for 25A
1
2
3
Voltage code : D = 200V
G = 400V
J = 600V
K = 800V
M = 1000V
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