GBU1010C

更新时间： 2024-02-24 01:12:32

品牌	Logo	应用领域
虹扬 - HY		整流二极管
页数	文件大小	规格书
2页	37K
描述
SILICON BRIDGE RECTIFIERS

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中文翻译

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技术参数
数据手册

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GBU1010C 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

GBU1010C 数据手册

GBU10/15/25(C)SERIES

REVERSE VOLTAGE

FORWARD CURRENT - 10/15/25 Amperes

- 50 to 1000Volts

SILICON BRIDGE RECTIFIERS

GBU-C

FEATURES

.156(3.95)

●Surge overload rating -240~400 amperes peak

.148(3.75)

.874(22.2)

.860(21.8)

3.2*3.2

CHAMFER

●Ideal for printed circuit board

●Reliable low cost construction utilizing

molded plastic technique

.154(3.9)

.146(3.7)

.752(19.1)

.720(18.3)

.232(5.9)

.224(5.7)

●Plastic material has U/L

flammability classification 94V-0

.079(2.0)

.063(1.6)

●Mounting postition:Any

.100(2.54)

.085(2.16)

.126(3.2)

.720(18.29)

.680(17.27)

.114(2.9)

.080(2.03)

.065(1.65)

.047(1.2)

.035(0.9)

.022(.56)

.018(.46)

.210 .210 .210

.190 .190 .190

(5.3) (5.3) (5.3)

(4.8) (4.8) (4.8)

Dimensions in inches and (milimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

GBU

10005C 1001C

15005C 1501C

25005C 2501C

1002C

1502C

2502C

1004C

1504C

2504C

1006C

1506C

2506C

1008C

1508C

2508C

1010C

1510C

2510C

SYMBOL

UNIT

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward (with heatsink Note 2)

I(AV)

3.0

4.2

Rectified Current

@ TC=100℃ (without heatsink)

3.2

GBU

15C

GBU

25C

GBU

10C

Peak Forward Surage Current

300

400

240

IFSM

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load (JEDEC Method)

1.1

Maximum Forward Voltage at 5.0/7.5/12.5A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@ TJ=25℃

500

@ TJ=125℃

I²t

A²s

I²t Rating for Fusing (t<8.3ms)

200

Typical Junction Capacitance Per Element (Note1)

Typical Thermal Resistance (Note2)

Operating Temperature Range

RθJC

℃/W

℃

2.2

-55 to +125

-55 to +150

Storage Temperature Range

TSTG

℃

NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Device mounted on 100mm*100mm*1.6mm cu plate heatsink.

~ 287 ~

中文翻译

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与GBU1010C相关器件

型号	品牌	获取价格	描述	数据表
GBU1010G	HY	获取价格	Rectifier Diode,
GBU1010-G	COMCHIP	获取价格	RECT BRIDGE GPP 1000V 10A GBU
GBU1010H	ZOWIE	获取价格	GLASS PASSIVATED BRIDGE RECTIFIER
GBU1010LC	ZOWIE	获取价格	Low VF Bridge Rectifier
GBU1010TB	ETC	获取价格	BRIDGE RECT 1PHASE 1KV 10A GBU
GBU10A	GULFSEMI	获取价格	SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 10.0A
GBU10A	DACHANG	获取价格	Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000V Forward Current 10 A
GBU10A	LGE	获取价格	Silicon Bridge Rectifiers
GBU10A	PANJIT	获取价格	GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Am
GBU10A	AMERICASEMI	获取价格	BRIDGE RECTIFIERS

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