Datasheet > GBJ3504-B

GBJ3504-B

更新时间： 2024-01-12 10:31:37

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	75K
描述
Rectifier Diode,

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技术参数
数据手册

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GBJ3504-B 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.92	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

GBJ3504-B 数据手册

M C C

RATING AND CHARACTERISTIC CURVES

GBJ35005 thru GBJ3510

Micro Commercial Components

FIG.1 - FORWARD CURRENT DERATING CURVE

FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

400

WITH HEATSINK

300

200

100

SINGLE PHASE HALF WAVE 60Hz

RESISTIVE OR INDUCTIVE LOAD

WITHOUT HEATSINK

Single Half-Sine-Wave

(JEDEC METHOD)

NUMBER OF CYCLES AT 60Hz

100

120

140

100

CASE TEMPERATURE , C

FIG.3 - TYPICAL JUNCTION CAPACITANCE

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

1000

100

TJ = 25 C

1.0

0.1

PULSE WIDTH 300us

TJ = 25 C, f = 1MHz

1.0

0.01

100

1.0

4.0

10.0

1.4

1.6

1.2

1.8

0.2

0.4

0.6

0.8

1.0

REVERSE VOLTAGE , VOLTS

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

FIG.5 - TYPICAL REVERSE CHARACTERISTICS

1000

100

TJ = 125 C

TJ = 100 C

TJ = 50 C

1.0

0.1

TJ = 25 C

100

PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)

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Revision: 2

2006/05/29

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