Datasheet > GBJ3506G

GBJ3506G

更新时间： 2022-06-24 15:43:58

品牌	Logo	应用领域
纽航 - NIUHANG		/
页数	文件大小	规格书
3页	415K
描述
BRIDGE RECTIFIERS

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数据手册

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GBJ3506G 数据手册

Niu Hang

Specification

For Approval

Electronic Co. Ltd

GBJ3506G THRU GBJ3510G

BRIDGE RECTIFIERS

50 THRU 1000 Volts

35.0 Ampers GBJ

Marking

VOLTAGE

CURRENT

FEATURES

GBJ3510G

Glass passivated die construction

low forward voltage drop

xxxx

xxx

High current capability

High surge current capability

Plastic material-UL flammability 94V-0

MECHANICAL DATA

Case: GBJ , olded lastic

Terminals: Plated Leads Solderable per MIL-STD-202, Method 208

Polarity: As Marked on Case

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version

Remark:

(1).NH=niuhang trademark;

(2).xxxxx/xxx:

TYPICAL APPLICATIONS

The first five xxxxx:Periodic code,According to actual changes;

The last three xxx:Production line,According to actual changes;

(3).GBJ3510G=Modle;

For use in low voltage ,high frequency inverters ,DC/DC

converters,free wheeling ,and polarity protection applications

(4).+ ~ ~ -=Polarity mark

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C(UNLESS OTHERWISE NOTED)

Single phase,half wave,60Hz,resistive or inductive load.For capacitive load,derate current by 20%

Parameter

Symbol GBJ3506G GBJ3508G GBJ3510G

Unit

V _RRM

V _RMS

600

420

600

800

560

800

35.0

1000

700

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltag

1000

Maximum DC Blocking Voltage

with heatsink

Maximum Average Forward Rectified Current

@ TC=100°C (see fig.1)

I_F(AV)

without heatsink

3.6

Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimposed On Rate Load

(JEDEC Method)

I_FSM

350

Current Squared Time Per Diode(t<8.3ms)

A²sec

I²t

508

1.0

V _FM

Maximum Forward Voltage Per Diode @17.5A (Note 1)

T_C=25℃

Maximum DC Reverse Current at Rated DC Blocking Voltage Per

Diode(Note 2)

I_RRM

℃

T_C=150℃

500

C _J

T_J

Typical Junction Capacitance Per Diode (Note 3)

Operating Junction Temperature Range

-55 to +150

T_STD

Storage Temperature Range

Between junction and ambient, Without

heatsink

Θja

Typical thermal resistance (Note 4)

℃/W

Between junction and case, With heatsink

0.8

θJC

Notes:

1. Pulse test: 300 μs pulse width,1% duty cycle

Pulse test: pulse width≤40ms

3. Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

4. Device mounted on 50mm x 50mm x 1.6mm Cu Plate Heatsink.

Http://www.nhel.com.cn

Data: 2014/10/20

Rev.: A/1

Page:

12 3

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