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GBJ2510-F PDF预览

GBJ2510-F

更新时间: 2024-02-17 21:30:02
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美台 - DIODES 整流二极管桥式整流二极管PC局域网
页数 文件大小 规格书
3页 73K
描述
25A GLASS PASSIVATED BRIDGE RECTIFIER

GBJ2510-F 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.66Is Samacsys:N
二极管类型:RECTIFIER DIODEBase Number Matches:1

GBJ2510-F 数据手册

 浏览型号GBJ2510-F的Datasheet PDF文件第2页浏览型号GBJ2510-F的Datasheet PDF文件第3页 
SPICE MODEL: GBJ2510  
GBJ25005 - GBJ2510  
25A GLASS PASSIVATED BRIDGE RECTIFIER  
Features  
·
·
·
·
·
·
Glass Passivated Die Construction  
High Case Dielectric Strength of 1500VRMS  
Low Reverse Leakage Current  
GBJ  
Dim  
A
B
C
D
E
Min  
29.70  
19.70  
17.00  
3.80  
7.30  
9.80  
2.00  
0.90  
2.30  
Max  
30.30  
20.30  
18.00  
4.20  
Surge Overload Rating to 350A Peak  
Ideal for Printed Circuit Board Applications  
L
UL Listed Under Recognized Component  
Index, File Number E94661  
A
M
K
·
Lead Free Finish/RoHS Compliant (Note 4)  
7.70  
B
D
S
G
H
I
10.20  
2.40  
Mechanical Data  
·
N
_
Case: GBJ  
J
P
1.10  
·
Case Material: Molded Plastic. UL Flammability  
Classification 94V-0  
H
I
J
2.70  
C
R
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
K
L
3.0 X 45°  
Terminals: Plated Leads, Solderable per MIL-STD-202,  
4.40  
3.40  
3.10  
2.50  
0.60  
10.80  
4.80  
3.80  
3.40  
2.90  
0.80  
11.20  
e
3
Method 208  
M
N
P
·
·
·
·
·
·
Lead Free Plating (Tin Finish).  
Polarity: Molded on Body  
G
E
E
Mounting: Through Hole for #6 Screw  
Mounting Torque: 5.0 in-lbs Maximum  
Marking: Type Number  
R
S
Weight: 6.6 grams (approximate)  
All Dimensions in mm  
A = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics @ T  
Single phase, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
GBJ  
GBJ  
GBJ  
2502  
GBJ  
2504  
GBJ  
2506  
GBJ  
2508  
GBJ  
2510  
Characteristic  
Symbol  
Unit  
25005 2501  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
280  
25  
V
A
Average Forward Rectified Output Current  
(Note 1)  
@ TC = 100°C  
Non-Repetitive Peak Forward Surge Current 8.3 ms  
single half sine-wave superimposed on rated load  
IFSM  
VFM  
IR  
350  
A
V
Forward Voltage (per element)  
@ IF = 12.5A  
1.05  
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TC 25°C  
=
10  
500  
µA  
@ TC = 125°C  
I2t Rating for Fusing (t < 8.3ms) (Note 1)  
I2t  
CT  
510  
85  
A2s  
pF  
Typical Total Capacitance (per element) (Note 2)  
Typical Thermal Resistance Junction to Case (Note 3)  
Operating and Storage Temperature Range  
RqJC  
Tj, TSTG  
0.6  
°C/W  
°C  
-65 to +150  
Notes:  
1. Non-repetitive, for t > 1ms and < 8.3 ms.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.  
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.  
DS21221 Rev. 7 - 2  
1 of 3  
GBJ25005 - GBJ2510  
www.diodes.com  
ã Diodes Incorporated  

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