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GBJ2502-03-G PDF预览

GBJ2502-03-G

更新时间: 2024-11-18 20:56:19
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
4页 110K
描述
Bridge Rectifier Diode, 25A, 200V V(RRM),

GBJ2502-03-G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.78
配置:BRIDGE, 4 ELEMENTS二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 V最大非重复峰值正向电流:350 A
元件数量:4最高工作温度:150 °C
最大输出电流:25 A最大重复峰值反向电压:200 V
子类别:Bridge Rectifier Diodes表面贴装:NO
Base Number Matches:1

GBJ2502-03-G 数据手册

 浏览型号GBJ2502-03-G的Datasheet PDF文件第2页浏览型号GBJ2502-03-G的Datasheet PDF文件第3页浏览型号GBJ2502-03-G的Datasheet PDF文件第4页 
Glass Passivated Bridge Rectifiers  
GBJ25005-G Thru. GBJ2510-G  
Reverse Voltage: 50 to 1000V  
Forward Current: 25.0A  
RoHS Device  
GBJ  
Features  
-Rating to 1000V PRV.  
Φ0.134(3.4)  
Φ0.122(3.1)  
0.189(4.8)  
0.173(4.4)  
-Ideal for printed circuit board.  
1.193(30.3)  
1.169(29.7)  
0.150(3.8)  
0.118(3.00)*45°  
0.134(3.4)  
-Low forward voltage drop.  
-High current capability.  
-UL recognized file # E349301  
R
_
~
+
~
0.106(2.7)  
0.096(2.3)  
0.094(2.4)  
0.078(2.0)  
0.114(2.9)  
0.098(2.5)  
Mechanical Data  
0.043(1.1)  
0.035(0.9)  
-Epoxy: UL 94V-0 rate flame retardant.  
-Case: Molded plastic, GBJ  
-Mounting position: Any  
0.031(0.8)  
0.023(0.6)  
0.402(10.2)  
0.386(9.8) 0.287(7.3) 0.287(7.3)  
0.303(7.7) 0.303(7.7)  
SPACING  
-Weight: 6.81grams  
Dimensions in inches and (millimeter)  
Maximum ratings and electrical characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
GBJ  
25005-G  
GBJ  
2501-G  
GBJ  
2502-G  
GBJ  
2504-G  
GBJ  
2506-G  
GBJ  
2508-G  
GBJ  
2510-G  
Symbol  
Parameter  
Unit  
Maximum Recurrent Peak Reverse Voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
V
140  
Maximum RMS Voltage  
V
DC  
100  
200  
1000  
Maximum DC Blocking Voltage  
25.0  
4.2  
Maximum Average Forward (With heatsink Note 2)  
Rectified Current @Tc=100°C (without heatsink)  
I
(AV)  
A
A
Peak Forward Surge Current ,  
IFSM  
8.3ms Single Half Sine-Wave  
350  
Super Imposed On Rated Load (JEDEC Method)  
Maximum Forward Voltage at 12.5A DC  
1.0  
VF  
V
@TJ=25°C  
@TJ=125°C  
10.0  
500  
Maximum DC Reverse Current  
At Rate DC Blocking Voltage  
μA  
IR  
I2 T Rating for Fusing (t<8.3ms)  
A2s  
pF  
I2t  
508  
Typical Junction Capacitance Per Element  
(Note 1)  
C
J
85  
Typical Thermal Resistance  
RθJC  
0.6  
°C/W  
°C  
Operating Temperature Range  
-55 to +150  
-55 to +150  
TJ  
Storage Temperature Range  
Notes:  
TSTG  
°C  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Device mounted on 300mm*300mm*1.6mm Cu plate heatsink.  
Company reserves the right to improve product design , functions and reliability without notice.  
REV: F  
Page 1  
QW-BBR60  
Comchip Technology CO., LTD.  

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