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GBJ2504 PDF预览

GBJ2504

更新时间: 2024-11-18 04:19:27
品牌 Logo 应用领域
EIC 整流二极管桥式整流二极管
页数 文件大小 规格书
2页 46K
描述
SILICON BRIDGE RECTIFIERS

GBJ2504 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.69Is Samacsys:N
其他特性:HIGH RELIABILITY最小击穿电压:400 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-T4最大非重复峰值正向电流:300 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:25 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
参考标准:TS 16949最大重复峰值反向电压:400 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

GBJ2504 数据手册

 浏览型号GBJ2504的Datasheet PDF文件第2页 
SILICON BRIDGE RECTIFIERS  
GBJ2500 - GBJ2510  
RBV25  
PRV : 50 - 1000 Volts  
Io : 25 Amperes  
3.9 ± 0.2  
30 ± 0.3  
C3  
4.9 ± 0.2  
Æ 3.2 ± 0.1  
FEATURES :  
* Glass Passivated Die Construction  
* High surge current capability  
* High reliability  
+ ~ ~  
* Low reverse current  
* Low forward voltage drop  
* High case dielectric strength of 2000 VDC  
* High current capability  
* Very good heat dissipation  
* Pb / RoHS Free  
1.0 ± 0.1  
2.7 ± 0.2  
0.7 ± 0.1  
MECHANICAL DATA :  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
10  
7.5 7.5  
±0.2 ±0.2 ±0.2  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : Plated lead solderable per  
MIL-STD-202, Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
Dimensions in millimeters  
* Weight : 8.17 grams ( Approximaly )  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
GBJ  
2500  
GBJ  
2501  
GBJ  
2502  
GBJ  
2504  
GBJ  
2506  
GBJ  
2508  
GBJ  
2510  
SYMBOL  
RATING  
UNIT  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
25  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
A
100  
1000  
Maximum DC Blocking Voltage  
Maximum Average Forward Current Tc = 100°C  
IF(AV)  
Peak Forward Surge Current Single half sine wave  
Superimposed on rated load (JEDEC Method)  
IFSM  
300  
510  
A
I2t  
VF  
A2S  
V
Current Squared Time at t < 8.3 ms.  
1.1  
10  
Maximum Forward Voltage per Diode at IF = 12.5 A  
IR  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25 °C  
mA  
IR(H)  
500  
0.6  
Ta = 100 °C  
mA  
Thermal Resistance, Junction to Case  
Operating Junction Temperature Range  
Storage Temperature Range  
°C/W  
°C  
RqJC  
TJ  
- 40 to + 150  
- 40 to + 150  
TSTG  
°C  
Note :  
1. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.  
Page 1 of 2 Rev. 03 : September 9, 2005  

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