Datasheet > GBJ2501-G

GBJ2501-G

更新时间： 2024-01-04 13:07:23

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4页	76K
描述
Glass Passivated Bridge Rectifiers

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技术参数
数据手册

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GBJ2501-G 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.81
配置：	BRIDGE, 4 ELEMENTS	二极管类型：	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)：	1.1 V	最大非重复峰值正向电流：	350 A
元件数量：	4	最高工作温度：	150 °C
最大输出电流：	25 A	峰值回流温度（摄氏度）：	NOT SPECIFIED
最大重复峰值反向电压：	100 V	子类别：	Bridge Rectifier Diodes
表面贴装：	NO	处于峰值回流温度下的最长时间：	NOT SPECIFIED

GBJ2501-G 数据手册

Glass Passivated Bridge Rectifiers

Comchip

S M D D i o d e S p e c i a l i s t

GBJ25005-G Thru. GBJ2510-G

Reverse Voltage: 50 to 1000V

Forward Current: 25.0A

RoHS Device

GBJ

Features

- Rating to 1000V PRV.

-Ideal for printed circuit board

-Low forward voltage drop, high current capability.

Φ0.134(3.4)

Φ0.122(3.1)

0.189(4.8)

0.173(4.4)

1.193(30.3)

1.169(29.7)

0.150(3.8)

0.118(3.00)*45°

0.134(3.4)

0.106(2.7)

0.096(2.3)

Mechanical Data

-Epoxy: U/L 94-V0 rate flame retardant.

0.094(2.4)

0.114(2.9)

0.098(2.5)

0.078(2.0)

0.043(1.1)

0.035(0.9)

-Case: Molded plastic, GBJ

0.031(0.8)

0.023(0.6)

-Mounting position: Any

-Weight: 6.81grams

0.402(10.2)

0.386(9.8) 0.287(7.3) 0.287(7.3)

0.303(7.7) 0.303(7.7)

SPACING

Dimensions in inches and (millimeter)

Maximum ratings and electrical characteristics

Rating at 25 ^OC ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

GBJ

25005-G

GBJ

2501-G

GBJ

2502-G

GBJ

2504-G

GBJ

2506-G

GBJ

2508-G

GBJ

2510-G

Symbol

Parameter

Unit

Maximum Recurrent Peak Reverse Voltage

RRM

RMS

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum RMS Voltage

100

1000

Maximum DC Blocking Voltage

25.0

4.2

Maximum Average Forward (With heatsink Note2)

Rectified Current @Tc=100°C (without hestsink)

(AV)

Peak Forward Surage Current ,

IFSM

8.3ms Single Half Sine-Wave

350

Super Imposed On Rated Load (JEDEC Method)

Maximum Forward Voltage at 12.5A DC

1.1

@TJ=25°C

@TJ=125°C

10.0

500

Maximum DC Reverse Current

At Rate DC Blocking Voltage

μA

I²T Rating for Fusing(t<8.3ms)

A²s

I²t

510

Typical Junction Capacitandce Per Element

(Note 1)

^OC/W

^OC

Typical Thermal Resistance (Note 2)

Operating Temperature Range

Storage Temperature Range

RθJA

0.6

-55 to +150

TSTG

^OC

Notes:

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Device mounted on 300mm*300mm*1.6mm Cu plate heatsink.

REV:C

Page 1

QW-BBR60

Comchip Technology CO., LTD.

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