Datasheet > GA300TD60S

GA300TD60S

更新时间： 2024-09-25 10:38:31

品牌	Logo	应用领域
威世 - VISHAY		双极性晶体管
页数	文件大小	规格书
8页	126K
描述
Dual INT-A-PAK Low Profile 'Half-Bridge' (Standard Speed IGBT), 300 A

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GA300TD60S 数据手册

GA300TD60S

Vishay Semiconductors

Dual INT-A-PAK Low Profile "Half-Bridge"

(Standard Speed IGBT), 300 A

FEATURES

• Generation 4 IGBT technology

• Standard: Optimized for hard switching speed

DC to 1 kHz

• Low V_CE(on)

• Square RBSOA

• HEXFRED^®antiparallel diode with ultrasoft reverse

recovery characteristics

• Industry standard package

• Al₂O₃DBC

• UL approved file E78996

• Compliant to RoHS Directive 2002/95/EC

• Designed for industrial level

Dual INT-A-PAK Low Profile

BENEFITS

PRODUCT SUMMARY

• Increased operating efficiency

V_CES

600 V

530 A

1.24 V

• Performance optimized as output inverter stage for TIG

welding machines

I_CDC at T_C= 25 °C

V_CE(on)(typical) at 300 A, 25 °C

• Direct mounting on heatsink

• Very low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

600

530

376

800

219

145

UNITS

Collector to emitter voltage

V_CES

T_C= 25 °C

(1)

Continuous collector current

I_C

T_C= 80 °C

Pulsed collector current

I_CM

I_LM

Clamped inductive load current

T_C= 25 °C

T_C= 80 °C

Diode continuous forward current

Gate to emitter voltage

I_F

V_GE

P_D

T_C= 25 °C

1136

636

Maximum power dissipation (IGBT)

_C= 80 °C

Any terminal to case

(V_RMSt = 1 s, T_J= 25 °C)

RMS isolation voltage

V_ISOL

3500

Note

(1)

Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals

Document Number: 93362

Revision: 31-May-11

For technical questions, contact: indmodules@vishay.com

This document is subject to change without notice.

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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