Datasheet > 晶体管 > IGBT> GA300TD60U

GA300TD60U

更新时间： 2024-11-12 22:29:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
10页	242K
描述
HALF-BRIDGE IGBT DUAL INT-A-PAK

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GA300TD60U 数据手册

PD -50057E

GA300TD60U

Ultra-Fast Speed IGBT

"HALF-BRIDGE" IGBT DUAL INT-A-PAK

Features

V_CES= 600V

• Generation 4 IGBT technology

• UltraFast: Optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

V_CE_{(on) typ.}= 1.80V

• Very low conduction and switching losses

• HEXFRED^™antiparallel diodes with ultra- soft

recovery

@V = 15V, I_C= 300A

• Industry standard package

• UL approved

Benefits

• Increased operating efficiency

• Direct mounting to heatsink

• Performance optimized for power conversion: UPS,

SMPS, Welding

• Lower EMI, requires less snubbing

Absolute Maximum Ratings

Parameter

Collector-to-Emitter Voltage

Max.

600

300

600

±20

2500

880

Units

V_CES

I_C@ T_C= 25°C

Continuous Collector Current

Pulsed Collector Current•

I_CM

I_LM

Peak Switching Current‚

I_FM

Peak Diode Forward Current

Gate-to-Emitter Voltage

V_GE

V_ISOL

RMS Isolation Voltage, Any Terminal To Case, t = 1 min

Maximum Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

P_D@ T_C= 25°C

P_D@ T_C= 85°C

460

T_J

-40 to +150

-40 to +125

°C

T_STG

Thermal / Mechanical Characteristics

Parameter

Thermal Resistance, Junction-to-Case - IGBT

Typ.

—

Max.

0.14

0.20

—

Units

R_θJC

R_θCS

Thermal Resistance, Junction-to-Case - Diode

Thermal Resistance, Case-to-Sink - Module

Mounting Torque, Case-to-Heatsink

Mounting Torque, Case-to-Terminal 1, 2 & 3

Weight of Module

—

°C/W

0.1

—

6.0

N m

—

5.0

400

—

www.irf.com

05/14/02

12 3 4 5 6 7...10

中文翻译

下载PDF

与GA300TD60U相关器件

型号	品牌	获取价格	描述	数据表
GA301	MICROSEMI	获取价格	SCRs Commercial Nanosecond Switching Planar
GA301A	MICROSEMI	获取价格	SCRs Commercial Nanosecond Switching Planar
GA301AE3	MICROSEMI	获取价格	Silicon Controlled Rectifier, 0.314A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-18,
GA301E3	MICROSEMI	获取价格	Silicon Controlled Rectifier, 0.314A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-18
GA3092	COILCRAFT	获取价格	Mini Air Core Inductors
GA3092_15	COILCRAFT	获取价格	High-Current Air Core Inductors
GA3092-AL	COILCRAFT	获取价格	Air Core Inductors
GA3092-ALB	COILCRAFT	获取价格	General Purpose Inductor, 0.0037uH, 5%, 1 Element, Air-Core, SMD, 1922, ROHS COMPLIANT
GA3092-ALC	COILCRAFT	获取价格	General Purpose Inductor, 0.0037uH, 5%, 1 Element, Air-Core, SMD, 1922, ROHS COMPLIANT
GA3092-ALD	COILCRAFT	获取价格	General Purpose Inductor, 0.0037uH, 5%, 1 Element, Air-Core, SMD, 1922, ROHS COMPLIANT