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G7096-02 PDF预览

G7096-02

更新时间: 2024-10-28 19:28:43
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2页 77K
描述
Optoelectronic Device

G7096-02 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.59Base Number Matches:1

G7096-02 数据手册

 浏览型号G7096-02的Datasheet PDF文件第2页 
ULTRAFAST InGaAs  
MSM PHOTODETECTORS  
G7096 SERIES  
Ultrafast Response (tr = 40ps G7096  
)
FEATURES  
●Ultrafast response  
Large photosensitive area  
APPLICATIONS  
Optical high speed waveform measurement  
Optical communications  
G7096  
G7096-01  
G7096-02  
and each polarity of the output pulse can be obtained in  
response to the applied bias.  
The G7096 is an InGaAs MSM (Metal-Semiconductor-Metal)  
photodetector that achieves an ultrafast rise times of 40 ps.  
The photosensitive area of the MSM photodetector is  
composed of symmetrical and interdigital Schottky contacts,  
and is relatively larger than other ultra fast photodetectors, thus  
facilitating coupling with an optical system. So, the MSM  
photodetector is ideal as an ultrafast detector for digital signal  
transmission in optical communications.  
The G7096 series consists of various package styles: a coaxial  
metal package* facilitating connecting with an SMA connector  
(G7096: The bias-tee is necessary), a general purpose TO-18  
package (G7096-01), and a small ceramic package (G7096-  
02). Fiber-pigtailed or optical connectorised types are also  
available for G7096 and G7096-01.  
*Japanese Patent No.2070802  
Additionally, both polarities of the bias voltage are available,  
ELECTRICAL AND OPTICAL CHARACTERISTICSTa=25, VB=10V)  
ABSOLUTE MAXIMUM RATINGSTa=25℃)  
Value  
Parameter  
Value  
Symbol  
Unit  
Condition  
Unit  
Parameter  
SymbolCondition  
Min.  
0.2  
-
Typ.  
0.4  
15  
Max.  
-
Maximum Bias Voltage  
Maximum Light Input  
Pulsed Light  
15  
VBmax  
V
Radiant sensitivity  
Dark Current  
NEP**  
λ=1.3μm  
S
A/W  
Pulse width1ns�  
Pulse width>1ns  
20  
10  
2
ID  
μA  
Lmax  
mW  
mW  
℃�  
℃�  
CW to Pulsed Light  
2×10-10  
3×10-10  
10-10  
G4176  
-
-
-
-
-
-
Operating Temperature  
Storage Temperature  
-40 to +85  
-40 to +100  
Topr  
Tstg  
W/Hz1/2  
λ=1.3μm  
G4176-01  
G4176-02  
Terminal Capacitance  
G4176  
General Characteristics (Ta=25)  
-
-
-
0.7  
0.9  
1.2  
0.8  
1.0  
1.4  
Parameter  
Value  
0.85 to 1.65  
1.5  
Unit  
μm  
μm  
mm2  
mm2  
Symbol�  
Condition�  
pF  
Ct  
G4176-01  
G4176-02  
Rise Time  
G4176  
Spectral Response Range  
Peak Response Wavelength  
Effective Sensitive Area  
Chip Size  
λ  
VB=10V  
λp�  
A
VB=10V  
0.2×0.2  
1×1  
-
-
-
40  
80  
60  
60  
100  
80  
ps  
tr  
tf  
10 to 90%  
10 to 90%  
G4176-01  
G4176-02  
Fall Time  
Package  
TO-5  
G7096  
(Unified with SMA connector)  
G7096-01  
TO-18  
G4176  
-
-
-
120  
160  
140  
160  
200  
180  
Ceramic  
G7096-02  
ps  
G4176-01  
G4176-02  
**Noise Equivalent Power  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.  
C
○�  
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 1999 Hamamatsu Photonics K.K.  

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