ULTRAFAST InGaAs
MSM PHOTODETECTORS
G7096 SERIES
Ultrafast Response (tr = 40ps G7096
)
■FEATURES
●Ultrafast response
●Large photosensitive area�
�
■APPLICATIONS
●Optical high speed waveform measurement
●Optical communications
G7096
G7096-01
G7096-02
and each polarity of the output pulse can be obtained in
response to the applied bias.
The G7096 is an InGaAs MSM (Metal-Semiconductor-Metal)
photodetector that achieves an ultrafast rise times of 40 ps.
The photosensitive area of the MSM photodetector is
composed of symmetrical and interdigital Schottky contacts,
and is relatively larger than other ultra fast photodetectors, thus
facilitating coupling with an optical system. So, the MSM
photodetector is ideal as an ultrafast detector for digital signal
transmission in optical communications.
The G7096 series consists of various package styles: a coaxial
metal package* facilitating connecting with an SMA connector
(G7096: The bias-tee is necessary), a general purpose TO-18
package (G7096-01), and a small ceramic package (G7096-
02). Fiber-pigtailed or optical connectorised types are also
available for G7096 and G7096-01.
*Japanese Patent No.2070802
Additionally, both polarities of the bias voltage are available,
■ELECTRICAL AND OPTICAL CHARACTERISTICS(Ta=25℃, VB=10V)
■ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Value
Parameter
Value
Symbol
Unit
Condition
�
Unit
Parameter
Symbol� Condition
�
Min.
0.2
-
Typ.
0.4
15
Max.
-
Maximum Bias Voltage
Maximum Light Input
Pulsed Lightꢀ
15
VBmax
V
Radiant sensitivity
Dark Current
NEP**
λ=1.3μm
S
A/W
Pulse width≦1ns�
Pulse width>1ns
20
10
2
ID
μA
Lmax
mW
mW
℃�
℃�
CW to Pulsed Light
2×10-10
3×10-10
3×10-10
G4176
-
-
-
-
-
-
Operating Temperature
Storage Temperature
-40 to +85
-40 to +100
Topr
Tstg
W/Hz1/2
λ=1.3μm
G4176-01
G4176-02
Terminal Capacitance
G4176
■General Characteristics (Ta=25℃)
-
-
-
0.7
0.9
1.2
0.8
1.0
1.4
Parameter
Value
0.85 to 1.65
1.5
Unit
μm
μm
mm2
mm2
Symbol�
Condition�
pF
Ct
G4176-01
G4176-02
Rise Time
G4176
�
Spectral Response Range
Peak Response Wavelength
Effective Sensitive Area
Chip Size
λ�
VB=10V
λp�
A
VB=10V
0.2×0.2
1×1
-
-
-
40
80
60
60
100
80
ps
tr
tf
10 to 90%
10 to 90%
G4176-01
G4176-02
Fall Time
Package
TO-5
ꢀG7096
(Unified with SMA connector)
ꢀG7096-01
TO-18
G4176
-
-
-
120
160
140
160
200
180
Ceramic
ꢀG7096-02
ps
G4176-01
G4176-02
**Noise Equivalent Power
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
C
○�
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 1999 Hamamatsu Photonics K.K.