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G3J

更新时间： 2024-02-22 13:13:48
品牌 Logo 应用领域
海湾 - GULFSEMI 二极管
页数 文件大小 规格书
2页 133K
描述
SINTERED GLASS JUNCTION RECTIFIER VOLTAGE: 100V to 800V CURRENT: 3.0A

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中文翻译

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G3J 技术参数

生命周期：Obsolete包装说明：E-LALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.41Is Samacsys：N
应用：GENERAL PURPOSE外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：1.1 V
JESD-30 代码：E-LALF-W2最大非重复峰值正向电流：125 A
元件数量：1相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-55 °C最大输出电流：3 A
封装主体材料：GLASS封装形状：ELLIPTICAL
封装形式：LONG FORM认证状态：Not Qualified
最大重复峰值反向电压：800 V最大反向恢复时间：3 µs
子类别：Rectifier Diodes表面贴装：NO
端子形式：WIRE端子位置：AXIAL
Base Number Matches：1

G3J 数据手册

 浏览型号G3J的Datasheet PDF文件第2页 
G3B THRU G3K  
SINTERED GLASS JUNCTION  
RECTIFIER  
VOLTAGE: 100V to 800V  
CURRENT: 3.0A  
G-3  
FEATURE  
High temperature metallurgically bonded construction  
Sintered glass cavity free junction  
High temperature soldering guaranteed  
350°C /10sec/0.375”lead length at 5 lbs tension  
MECHANICAL DATA  
Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
Case: G-3 sintered glass case  
Polarity: color band denotes cathode  
Mounting position: any  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,  
for capacitive load, derate current by 20%)  
SYMBOL  
G3B  
G3J  
G3K  
units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Vrrm  
Vrms  
Vdc  
100  
70  
600  
420  
600  
800  
560  
800  
V
V
V
Maximum DC blocking Voltage  
100  
Maximum Average Forward Rectified Current 3/8”lead  
length at Ta =70°C  
If(av)  
3.0  
A
Peak Forward Surge Current 8.3ms single  
Half sine-wave superimposed on rated load  
Maximum Instantaneous Forward Voltage at 3.0A  
Maximum Full Load Reverse Current Full Cycle  
Average at 70°C  
Ifsm  
Vf  
125.0  
A
V
1.2  
1.1  
Ir(av)  
200.0  
µA  
5.0  
100.0  
3.0  
Maximum DC Reverse Current  
at rated DC blocking voltage  
Ta =25°C  
Ta =150°C  
Ir  
µA  
Typical Reverse Recovery Time  
Typical Junction Capacitance  
(Note 1)  
(Note 2)  
Trr  
Cj  
µS  
40.0  
pF  
Rth(ja)  
Rth(jl)  
Tstg, Tj  
20.0  
Typical Thermal Resistance  
(Note 3)  
°C /W  
°C  
10.0  
Storage and Operating Junction Temperature  
Note:  
-65 to +175  
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc  
3. Thermal Resistance from Junction to Ambient and from Junction to Lead at 3/8”lead length, with both leads mounted between  
heatsinks  
Rev.A1  
www.gulfsemi.com  
12

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