Datasheet > G3K

G3K

更新时间： 2024-02-27 20:42:27

品牌	Logo	应用领域
海湾 - GULFSEMI		/
页数	文件大小	规格书
2页	133K
描述
SINTERED GLASS JUNCTION RECTIFIER VOLTAGE: 100V to 800V CURRENT: 3.0A

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技术参数
数据手册

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G3K 技术参数

生命周期：	Obsolete	包装说明：	E-LALF-W2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.41	应用：	GENERAL PURPOSE
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.1 V	JESD-30 代码：	E-LALF-W2
最大非重复峰值正向电流：	125 A	元件数量：	1
相数：	1	端子数量：	2
最高工作温度：	175 °C	最低工作温度：	-55 °C
最大输出电流：	3 A	封装主体材料：	GLASS
封装形状：	ELLIPTICAL	封装形式：	LONG FORM
认证状态：	Not Qualified	最大重复峰值反向电压：	800 V
最大反向恢复时间：	3 µs	子类别：	Rectifier Diodes
表面贴装：	NO	端子形式：	WIRE
端子位置：	AXIAL	Base Number Matches：	1

G3K 数据手册

G3B THRU G3K

SINTERED GLASS JUNCTION

RECTIFIER

VOLTAGE: 100V to 800V

CURRENT: 3.0A

G-3

FEATURE

High temperature metallurgically bonded construction

Sintered glass cavity free junction

High temperature soldering guaranteed

350°C /10sec/0.375”lead length at 5 lbs tension

MECHANICAL DATA

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Case: G-3 sintered glass case

Polarity: color band denotes cathode

Mounting position: any

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,

for capacitive load, derate current by 20%)

SYMBOL

G3B

G3J

G3K

units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Vrrm

Vrms

Vdc

100

600

420

600

800

560

800

Maximum DC blocking Voltage

100

Maximum Average Forward Rectified Current 3/8”lead

length at Ta =70°C

If(av)

3.0

Peak Forward Surge Current 8.3ms single

Half sine-wave superimposed on rated load

Maximum Instantaneous Forward Voltage at 3.0A

Maximum Full Load Reverse Current Full Cycle

Average at 70°C

Ifsm

125.0

1.2

1.1

Ir(av)

200.0

µA

5.0

100.0

3.0

Maximum DC Reverse Current

at rated DC blocking voltage

Ta =25°C

Ta =150°C

µA

Typical Reverse Recovery Time

Typical Junction Capacitance

(Note 1)

(Note 2)

Trr

µS

40.0

Rth(ja)

Rth(jl)

Tstg, Tj

20.0

Typical Thermal Resistance

(Note 3)

°C /W

°C

10.0

Storage and Operating Junction Temperature

Note:

-65 to +175

1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A

2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

3. Thermal Resistance from Junction to Ambient and from Junction to Lead at 3/8”lead length, with both leads mounted between

heatsinks

Rev.A1

www.gulfsemi.com

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