Datasheet > G3J14

G3J14

更新时间： 2025-08-17 03:38:35

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	377K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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G3J14 数据手册

Pb Free Plating Product

ISSUED DATE :2005/03/04

GTM

CORPORATION

REVISED DATE :

BVDSS

DS(ON)

-30V

85mΩ

-3.7A

G3J14

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

Description

The G3J14 provide the designer with best combination of fast switching, low on-resistance and

cost-effectiveness.

The G3J14 is universally preferred for all commercial-industrial surface mount applications and suited for low

voltage applications such as DC/DC converters.

Features

*Low On-resistance

*High-speed switching

*Simple Drive Requirement

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

2.70

2.40

1.40

0.35

1.00

1.30

0.20

0.10

0.40

0.85

0̓

1.15

10̓

0.45

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

-30

Unit

Gate-Source Voltage

V_GS

W/ć

f20

-3.7

-3.0

-10

1.38

0.01

Continuous Drain Current³

Pulsed Drain Current^1,2

Power Dissipation

I_D@T

=25к

=70к

I_DM

P_D@T

A=25к

Linear Derating Factor

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-a

Ratings

Unit

ć/W

Thermal Resistance Junction-ambient³Max.

G3J14

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