是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.81 |
配置: | BRIDGE, 4 ELEMENTS | 二极管元件材料: | SILICON |
二极管类型: | BRIDGE RECTIFIER DIODE | 元件数量: | 4 |
相数: | 1 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
G20120B1FN1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
G20120B1TB1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
G20120B1TC1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
G20120C1EB1S | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, Silicon, | |
G20120C1EBC1SE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, Silicon, | |
G20120C1EC1S | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, Silicon, | |
G20120C1EN1S | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, Silicon, | |
G20120C1FBC1S | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, Silicon, | |
G20120C1FBC1SE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, Silicon, | |
G20120C1FN1S | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, Silicon, |