RoHS
G1AFS THRU G1MFS
COMPLIANT
Surface Mount General Purpose Rectifier
Features
● Low profile package
● Ideal for automated placement
● Glass passivated chip junction
● High forward surge capability
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Typical Applications
For use in general purpose rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer and telecommunication.
Mechanical Data
●
ackage: SMAF
P
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
●
Cathode line denotes the cathode end
Polarity:
(T =25℃ Unless otherwise specified
■
Maximum Ratings
)
a
G1AFS
G1AFS
50
G1BFS
G1BFS
100
G1DFS
G1DFS
200
G1GFS
G1GFS
400
G1JFS
G1JFS
600
G1KFS G1MFS
PARAMETER
SYMBOL
UNIT
G1KFS
800
G1MFS
1000
700
Device marking code
V
V
V
V
A
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
RRM
V
35
70
140
280
420
560
RMS
V
50
100
200
400
600
800
1000
Maximum DC blocking Voltage
DC
Average rectified output current
I
1.0
O
@60Hz sine wave, resistance load, TL (Fig.1)
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Tj=25℃
Forward Surge Current (Non-repetitive)
30
IFSM
A
60
@1ms, square wave, 1 cycle, Tj=25℃
Current squared time
@1ms≤t≤8.3ms Tj=25℃
A2s
℃
I2t
3.735
T
stg
-55 ~ +150
-55 ~ +150
Storage temperature
T
j
Junction temperature
℃
(T =25℃ Unless otherwise specified
■Electrical Characteristics
)
a
G1AFS G1BFS G1DFS G1GFS G1JFS G1KFS G1MFS
PARAMETER
SYMBOL
UNIT TEST CONDITIONS
Maximum instantaneous
forward voltage
V
I
=1.0A
V
1.1
5.0
F
FM
T =25℃
j
Maximum DC reverse current at
rated DC blocking voltage
I
μA
R
100
T =125℃
j
Measured at 1MHz
Typical junction capacitance
Cj
pF and Applied Reverse
Voltage of 4.0 V.D.C
7
1 / 4
S-S1314
Rev. 1.5, 23-Nov-21
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com