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G1MF PDF预览

G1MF

更新时间: 2024-11-10 15:18:07
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 206K
描述
SMAF

G1MF 数据手册

 浏览型号G1MF的Datasheet PDF文件第2页浏览型号G1MF的Datasheet PDF文件第3页浏览型号G1MF的Datasheet PDF文件第4页 
RoHS  
G1AF THRU G1MF  
COMPLIANT  
Surface Mount General Purpose Rectifier  
Features  
Low profile package  
Ideal for automated placement  
Glass passivated chip junction  
High forward surge capability  
Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Typical Applications  
For use in general purpose rectification of power  
supplies, inverters, converters, and freewheeling diodes for  
consumer, and telecommunication.  
Mechanical Data  
ackage: SMAF  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified  
Maximum Ratings  
a
G1AF  
G1AF  
50  
G1BF  
G1BF  
100  
G1DF  
G1DF  
200  
G1GF  
G1GF  
400  
G1JF  
G1JF  
600  
G1KF  
G1KF  
800  
G1MF  
G1MF  
1000  
700  
PARAMETER  
SYMBOL  
UNIT  
Device marking code  
V
V
V
V
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
RRM  
V
35  
70  
140  
280  
420  
560  
RMS  
V
50  
100  
200  
400  
600  
800  
1000  
Maximum DC blocking Voltage  
DC  
Average rectified output current  
I
A
1.0  
30  
O
@60Hz sine wave, resistance load, TL (Fig.1)  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Tj=25℃  
Forward Surge Current (Non-repetitive)  
@1ms, square wave, 1 cycle, Tj=25℃  
Current squared time  
IFSM  
A
60  
A2s  
I2t  
3.735  
@1mst8.3ms Tj=25℃  
T
-55 ~ +150  
-55 ~ +150  
Storage temperature  
Junction temperature  
stg  
T
j
T =25Unless otherwise specified)  
Electrical Characteristics  
a
G1AF  
G1BF  
G1DF  
G1GF  
1.1  
G1JF  
G1KF  
G1MF  
PARAMETER  
SYMBOL  
UNIT TEST CONDITIONS  
Maximum instantaneous  
forward voltage  
V
I
=1.0A  
V
F
FM  
T =25  
5.0  
j
Maximum DC reverse current at  
rated DC blocking voltage  
I
μA  
R
100  
T =125℃  
j
Measured at 1MHz  
and Applied Reverse  
Voltage of 4.0 V.D.C  
Typical junction capacitance  
Cj  
pF  
8
1 / 4  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-S035  
Rev. 2.5, 23-Nov-21  
www.21yangjie.com  

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