RoHS
G1AF THRU G1MF
COMPLIANT
Surface Mount General Purpose Rectifier
Features
● Low profile package
● Ideal for automated placement
● Glass passivated chip junction
● High forward surge capability
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Typical Applications
For use in general purpose rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer, and telecommunication.
Mechanical Data
●
ackage: SMAF
P
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
●
Cathode line denotes the cathode end
Polarity:
(T =25℃ Unless otherwise specified
■
Maximum Ratings
)
a
G1AF
G1AF
50
G1BF
G1BF
100
G1DF
G1DF
200
G1GF
G1GF
400
G1JF
G1JF
600
G1KF
G1KF
800
G1MF
G1MF
1000
700
PARAMETER
SYMBOL
UNIT
Device marking code
V
V
V
V
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
RRM
V
35
70
140
280
420
560
RMS
V
50
100
200
400
600
800
1000
Maximum DC blocking Voltage
DC
Average rectified output current
I
A
1.0
30
O
@60Hz sine wave, resistance load, TL (Fig.1)
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Tj=25℃
Forward Surge Current (Non-repetitive)
@1ms, square wave, 1 cycle, Tj=25℃
Current squared time
IFSM
A
60
A2s
I2t
3.735
@1ms≤t≤8.3ms Tj=25℃
T
-55 ~ +150
-55 ~ +150
Storage temperature
Junction temperature
stg
℃
℃
T
j
(T =25℃ Unless otherwise specified)
■Electrical Characteristics
a
G1AF
G1BF
G1DF
G1GF
1.1
G1JF
G1KF
G1MF
PARAMETER
SYMBOL
UNIT TEST CONDITIONS
Maximum instantaneous
forward voltage
V
I
=1.0A
V
F
FM
T =25℃
5.0
j
Maximum DC reverse current at
rated DC blocking voltage
I
μA
R
100
T =125℃
j
Measured at 1MHz
and Applied Reverse
Voltage of 4.0 V.D.C
Typical junction capacitance
Cj
pF
8
1 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S035
Rev. 2.5, 23-Nov-21
www.21yangjie.com