生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.84 | Is Samacsys: | N |
最大集电极电流 (IC): | 400 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1680 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 500 ns | 标称接通时间 (ton): | 400 ns |
VCEsat-Max: | 2.4 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FZ400R06KL | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 400A I(C) | M:HL093HW048 |
![]() |
FZ400R06KL2 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 400A I(C) |
![]() |
FZ400R10KF2 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 400A I(C) | M:HL093HW048 |
![]() |
FZ400R12KE3 | EUPEC |
获取价格 |
IGBT-inverter |
![]() |
FZ400R12KE3 | INFINEON |
获取价格 |
62 mm 1200 V, 400 A single switch IGBT module?with TRENCHSTOP? IGBT3. |
![]() |
FZ400R12KE3_B1 | EUPEC |
获取价格 |
IGBT-modules |
![]() |
FZ400R12KE3B1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 650A I(C), 1200V V(BR)CES, N-Channel, |
![]() |
FZ400R12KE3B1HOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 650A I(C), 1200V V(BR)CES, N-Channel, |
![]() |
FZ400R12KE3HOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 650A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 |
![]() |
FZ400R12KE4 | INFINEON |
获取价格 |
62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode |
![]() |