Datasheet > FZ400R12KE3_B1

FZ400R12KE3_B1

更新时间： 2024-11-05 12:20:19

品牌	Logo	应用领域
EUPEC		双极性晶体管
页数	文件大小	规格书
8页	294K
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FZ400R12KE3_B1 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FZ400R12KE3_B1

IGBT-Wechselrichter / IGBT-inverter

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

1200

Kollektor-Dauergleichstrom

DC-collector current

T† = 80°C, TÝÎ = 150°C

T† = 25°C, TÝÎ = 150°C

I† ÒÓÑ

I†

400

650

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms, T† = 80°C

I†ç¢

PÚÓÚ

800

2250

+/-20

Gesamt-Verlustleistung

total power dissipation

T† = 25°C, TÝÎ = 150°C

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 400 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C

1,70 2,15

2,00

V†Š ÙÈÚ

V•ŠÚÌ

Q•

Gate-Schwellenspannung

gate threshold voltage

I† = 16,0 mA, V†Š = V•Š, TÝÎ = 25°C

V•Š = -15 V ... +15 V

5,0

5,8

3,70

1,9

6,5

µC

Gateladung

gate charge

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

28,0

1,10

Rückwirkungskapazität

reverse transfer capacitance

CØþÙ

I†Š»

Kollektor-Emitter Reststrom

collector-emitter cut-off current

5,0

Gate-Emitter Reststrom

gate-emitter leakage current

I•Š»

tÁ ÓÒ

400

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 400 A, V†Š = 600 V

V•Š = ±15 V

R•ÓÒ = 1,8 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,25

0,30

µs

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 400 A, V†Š = 600 V

V•Š = ±15 V

R•ÓÒ = 1,8 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,09

0,10

µs

tØ

tÁ ÓËË

tË

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 400 A, V†Š = 600 V

V•Š = ±15 V

R•ÓËË = 1,8 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,55

0,65

µs

Fallzeit (induktive Last)

fall time (inductive load)

I† = 400 A, V†Š = 600 V

V•Š = ±15 V

R•ÓËË = 1,8 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,13

0,18

µs

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 400 A, V†Š = 600 V

V•Š = ±15 V, L» = 85 nH

R•ÓÒ = 1,8 Â

TÝÎ = 25°C

TÝÎ = 125°C

EÓÒ

33,0

59,0

1600

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 400 A, V†Š = 600 V

V•Š = ±15 V, L» = 85 nH

R•ÓËË = 1,8 Â

TÝÎ = 25°C

TÝÎ = 125°C

EÓËË

Kurzschlußverhalten

SC data

t« ù 10 µs, V•Š ù 15 V

TÝÎ = 125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

I»†

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT

per IGBT

RÚÌœ†

0,055 K/W

prepared by: Mark Münzer

date of publication: 2004-4-8

revision: 3.2

approved by: Wilhelm Rusche

12 3 4 5 6 7 8

中文翻译

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与FZ400R12KE3_B1相关器件

型号	品牌	获取价格	描述	数据表
FZ400R12KE3B1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 650A I(C), 1200V V(BR)CES, N-Channel,
FZ400R12KE3B1HOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 650A I(C), 1200V V(BR)CES, N-Channel,
FZ400R12KE3HOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 650A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
FZ400R12KE4	INFINEON	获取价格	62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode
FZ400R12KE4HOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-5
FZ400R12KF	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 400A I(C) \| M:HL093HW048
FZ400R12KF2	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 1.2KV V(BR)CES \| 400A I(C)
FZ400R12KL	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 400A I(C) \| M:HL093HW048
FZ400R12KP4	INFINEON	获取价格	62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode
FZ400R12KP4HOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-5

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