生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.38 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 3 A | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 0.07 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 1.8 W |
最大脉冲漏极电流 (IDM): | 21 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FY3ACJ-03F | RENESAS |
获取价格 |
MITSUBISHI Nch POWER MOSFET |
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FY3HCJE24.576-T3 | ABRACON |
获取价格 |
FY3HXTAL OSC VCXO 24.567MHZ HXMOS SMD |
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FY4ADJ03A | ETC |
获取价格 |
TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | SO |
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FY4ADJ-03A | MITSUBISHI |
获取价格 |
HIGH-SPEED SWITCHING USE |
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FY4ADJ-03A | POWEREX |
获取价格 |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
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FY4ADJ-03A | RENESAS |
获取价格 |
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
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FY4AEJ-03 | RENESAS |
获取价格 |
HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET |
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FY5366X | ETC |
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SINGLE COLOR LED |
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FY5ACH03A | ETC |
获取价格 |
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5A I(D) | SO |
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FY5ACH-03A | MITSUBISHI |
获取价格 |
HIGH-SPEED SWITCHING USE |
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