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FY6ACH-02A PDF预览

FY6ACH-02A

更新时间: 2024-01-01 14:30:13
品牌 Logo 应用领域
POWEREX 晶体开关晶体管功率场效应晶体管脉冲光电二极管
页数 文件大小 规格书
4页 46K
描述
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

FY6ACH-02A 技术参数

生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.38配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):6 A
最大漏极电流 (ID):6 A最大漏源导通电阻:0.03 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.6 W最大脉冲漏极电流 (IDM):42 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FY6ACH-02A 数据手册

 浏览型号FY6ACH-02A的Datasheet PDF文件第2页浏览型号FY6ACH-02A的Datasheet PDF文件第3页浏览型号FY6ACH-02A的Datasheet PDF文件第4页 
MITSUBISHI Nch POWER MOSFET  
FY6ACH-02A  
HIGH-SPEED SWITCHING USE  
FY6ACH-02A  
OUTLINE DRAWING  
Dimensions in mm  
1.8 MAX.  
5.0  
SOURCE  
GATE  
DRAIN  
➀ ➂  
➁➃  
➄➅➆➇  
0.4  
1.27  
➆➇  
➄➅  
2.5V DRIVE  
VDSS .................................................................................. 20V  
rDS (ON) (MAX) ............................................................. 30m  
ID ........................................................................................... 6A  
SOP-8  
APPLICATION  
Motor control, Lamp control, Solenoid control  
DC-DC converter, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
20  
Unit  
V
VGS = 0V  
VDS = 0V  
±10  
V
6
A
IDM  
IDA  
Drain current (Pulsed)  
42  
A
Avalanche drain current (Pulsed) L = 10µH  
Source current  
6
1.7  
A
IS  
A
ISM  
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
6.8  
A
PD  
1.6  
W
°C  
°C  
g
Tch  
–55 ~ +150  
–55 ~ +150  
0.07  
Tstg  
Storage temperature  
Weight  
Typical value  
Sep.1998  

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