生命周期: | Active | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.46 | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 5 A |
最大漏极电流 (ID): | 5 A | 最大漏源导通电阻: | 0.05 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1.6 W | 最大脉冲漏极电流 (IDM): | 35 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FY5ACJ- | MITSUBISHI |
获取价格 |
HIGH-SPEED SWITCHING USE |
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FY5ACJ03A | ETC |
获取价格 |
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5A I(D) | SO |
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FY5ACJ-03A | POWEREX |
获取价格 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
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FY5ACJ-03F | RENESAS |
获取价格 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
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FY5AEJ-03 | RENESAS |
获取价格 |
MITSUBISHI POWER MOSFET HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET |
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FY5CVJM27.0 | ABRACON |
获取价格 |
FY5CXTAL VCXO 27.000MHZ HCMOS SMD |
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FY6ACH02A | ETC |
获取价格 |
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 20V V(BR)DSS | 6A I(D) | SO |
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FY6ACH-02A | MITSUBISHI |
获取价格 |
HIGH-SPEED SWITCHING USE |
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FY6ACH-02A | POWEREX |
获取价格 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
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FY6ACH-02A | RENESAS |
获取价格 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
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