Datasheet > FTK10N60P

FTK10N60P

更新时间： 2022-05-14 22:21:33

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
7页	373K
描述
10 Amps, 600 Volts N-CHANNEL MOSFET

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FTK10N60P 数据手册

SEMICONDUCTOR

FTK10N60P/F/DD

TECHNICAL DATA

10 Amps, 600 Volts

N-CHANNEL MOSFET

DESCRIPTION

These N-Channel enhancement mode power field effect

Transistors are produced using planar stripe, DMOS

technology.

This advanced technology has been especially tailored

to minimize on - state resistance , provide superior

switching performance,and Withstand high energy pulse

in the avalanche and commutaion mode .These devices

are well suited for high efficiency switch mode power

supply electronic lamp ballasts

P :

TO-220

F :

based on half bridge topology.

TO-220F

FEATURES

* R_DS(ON)= 0.75Ω@V_GS= 10V

* Low gate and reverse transfer Capacitance ( C: 18 pF typical )

* Fast switching capability

* Avalanche energy tested

DD :

* Improved dv/dt capability, high ruggedness

TO-263

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Pin Assignment

Order Number

Package

Packing

FTK10N60P

FTK10N60F

FTK10N60DD

TO-220

TO-220F

TO-263

Tube

Reel & Taping

Note: Pin Assignment:

G: Gate

D: Drain S: Source

2016. 09. 18

Revision No : 1

1/7

12 3 4 5 6 7

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