SEMICONDUCTOR
FTK10N65P / F / DD
TECHNICAL DATA
10 Amps, 650 Volts
N-CHANNEL MOSFET
DESCRIPTION
These N-Channel enhancement mode power field effect
Transistors are produced using planar stripe, DMOS
technology.
This advanced technology has been especially tailored
to minimize on - state resistance , provide superior
switching performance,and Withstand high energy pulse
in the avalanche and commutaion mode .These devices
are well suited for high efficiency switch mode power
supply electronic lamp ballasts
P :
1
TO-220
F :
based on half bridge topology.
1
TO-220F
FEATURES
* RDS(ON) = 1.0Ω@VGS = 10V
* Low gate and reverse transfer Capacitance ( C: 18 pF typical )
* Fast switching capability
* Avalanche energy tested
DD :
1
* Improved dv/dt capability, high ruggedness
TO-263
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Order Number
Package
Packing
1
2
3
FTK10N65P
FTK10N65F
FTK10N65DD
TO-220
TO-220F
TO-263
G
D
S
Tube
Tube
G
G
D
D
S
S
Reel & Taping
Note: Pin Assignment:
G: Gate
D: Drain S: Source
2013. 01. 10
Revision No : 1
1/7