Datasheet > FST8135SM4A

FST8135SM4A

更新时间： 2024-09-18 07:33:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
2页	119K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 35V V(RRM), Silicon, ROHS COMPLIANT, SM4, 3 PIN

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FST8135SM4A 数据手册

Schottky Power Surface Mount

FST81SM1-SM6 Series

Dim. Inches

Millimeter

2-PLCS.

Minimum Maximum Minimum Maximum Notes

38.35

26.42

1.490

1.510

1.040

37.85

26.12

1 2 3

Common Cathode

A2 1.020

.695

.110

.027

.715

.120

.037

.110

.370

.025

.715

17.65

2.79

0.69

2.54

8.89

0.38

17.65

18.16

3.04

0.94

3 PINS eq sp at .200

SM3 & SM4

D .100

2.79

9.40

0.64

.350

.015

1 2 3

A=Common Anode

G .695

18.16

2.49

SM1 & SM2

.088

J .240

.098

2.24

.260

1.195

.250

.085

.161

6.10

29.97

5.84

1.65

6.60

30.35

6.35

2.16

1.180

.230

1 2 3

D=Doubler

SM5 & SM6

M .065

.151

TYP. PIN CONFIGURATION TYP. PIN CONFIGURATION

FOR SM1, SM3, & SM5

FOR SM2, SM4, & SM6

Dia.

3.84

4.09

Note: Baseplate Common with Pin 2

Microsemi Catalog

Industry

Working Peak

Repetitive Peak

Schottky Barrier Rectifier

Guard Ring Protection

Catalog Number

Part Number Reverse Voltage Reverse Voltage

1 2

Common Cathode Center Tap

Low Forward Voltage

80CNQ035ASL

80CNQ035ASM

35V

40V

35V

40V

FST8135SM _ _

FST8140SM _ _

FST8145SM _ _

80CNQ040ASL

80CNQ040ASM

2 X 40 Amperes Avg.

150°C Junction Temperature

Reverse Energy Tested

80CNQ045ASL

80CNQ045ASM

45V

Note: 1 Specify (1-6) to identify package desired

ROHS Compliant

2 Specify C-Common Cathode, A-Common Anode, D-Doubler

Electrical Characteristics

F(AV) 80 Amps

F(AV) 40 Amps

C = 110°C, Square wave, 0JC = 0.5°C/W

Average forward current per pkg

Average forward current per leg

Maximum surge current per leg

Max repetitive peak reverse current per leg

Max peak forward voltage per leg

Max peak reverse current per leg

Typical junction capacitance per leg

C = 110°C, Square wave, 0JC = 1.0°C/W

FSM 800 Amps 8.3 ms, half sine, J = 150°C

R(OV) 2 Amps f = 1 KHZ, 25°C, 1µsec square wave

FM 0.47 volts

FM 0.53 volts

RM 500 mA

RM 3.0 mA

J 2100 pF

FM = 40A: J = 150°C*

FM = 40A: J = 25°C*

RRM, C = 125°C*

RRM, J = 25°C

R = 5.0V, C = 25°C

*Pulse test: Pulse width 300µsec, Duty cycle 2%

Thermal and Mechanical Characteristics

Storage temp range

STG

OJC

-55°C to 175°C

-55°C to 150°C

1.0°C/W Junction to case

Operating junction temp range

Max thermal resistance per leg

Max thermal resistance per pkg.

Typical thermal resistance (greased)

Mounting Base Torque

Junction to case

0.5°C/W

OCS

0.3°C/W Case to sink

10 inch pounds maximum (SM1, 2)

SM1-20.3 ounce (8.4 grams) typical

Weight

0.24

0.18

ounce (

6.7

5.2

ounce (

grams) typical

SM3-4

SM5-6

www.microsemi.com

January, 2010 - Rev. 4

中文翻译

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与FST8135SM4A相关器件

型号	品牌	获取价格	描述	数据表
FST8135SM4C	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 35V V(RRM), Silicon, ROHS COMPLIANT, S
FST8135SM4D	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 35V V(RRM), Silicon, ROHS COMPLIANT, S
FST8135SM5	MICROSEMI	获取价格	Schottky Power Surface Mount
FST8135SM5A	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 35V V(RRM), Silicon, ROHS COMPLIANT, S
FST8135SM5C	MICROSEMI	获取价格	暂无描述
FST8135SM5D	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 35V V(RRM), Silicon, ROHS COMPLIANT, S
FST8135SM6	MICROSEMI	获取价格	Schottky Power Surface Mount
FST8135SM6A	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 35V V(RRM), Silicon, ROHS COMPLIANT, S
FST8135SM6C	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 35V V(RRM), Silicon, ROHS COMPLIANT, S
FST8135SM6D	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 35V V(RRM), Silicon, ROHS COMPLIANT, S

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