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FSF250D1

更新时间： 2024-11-11 20:25:07
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 45K
描述
24A, 200V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN

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FSF250D1 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-254AA针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.79其他特性：RADIATION HARDENED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：200 V
最大漏极电流 (ID)：24 A最大漏源导通电阻：0.11 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-254AA
JESD-30 代码：S-MSFM-P3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：METAL封装形状：SQUARE
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：72 A认证状态：Not Qualified
表面贴装：NO端子形式：PIN/PEG
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FSF250D1 数据手册

 浏览型号FSF250D1的Datasheet PDF文件第2页浏览型号FSF250D1的Datasheet PDF文件第3页浏览型号FSF250D1的Datasheet PDF文件第4页浏览型号FSF250D1的Datasheet PDF文件第5页浏览型号FSF250D1的Datasheet PDF文件第6页浏览型号FSF250D1的Datasheet PDF文件第7页 
FSF250D, FSF250R  
24A, 200V, 0.110 Ohm, Rad Hard,  
SEGR Resistant, N-Channel Power MOSFETs  
June 1998  
Features  
Description  
• 24A, 200V, r  
• Total Dose  
= 0.110Ω  
The Discrete Products Operation of Intersil Corporation has  
developed a series of Radiation Hardened MOSFETs specif-  
ically designed for commercial and military space applica-  
DS(ON)  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
tions. Enhanced Power MOSFET immunity to Single Event  
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-  
lar, is combined with 100K RADS of total dose hardness to  
provide devices which are ideally suited to harsh space envi-  
ronments. The dose rate and neutron tolerance necessary  
for military applications have not been sacrificed.  
• Single Event  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
up to 80% of Rated Breakdown and  
of 10V Off-Bias  
DS  
V
GS  
The Intersil portfolio of SEGR resistant radiation hardened  
MOSFETs includes N-Channel and P-Channel devices in a  
variety of voltage, current and on-resistance ratings.  
Numerous packaging options are also available.  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
- Typically Survives 2E12 if Current Limited to I  
DM  
This MOSFET is an enhancement-mode silicon-gate power  
field-effect transistor of the vertical DMOS (VDMOS) struc-  
ture. It is specially designed and processed to be radiation  
tolerant. The MOSFET is well suited for applications  
exposed to radiation environments such as switching regula-  
tion, switching converters, motor drives, relay drivers and  
drivers for high-power bipolar switching transistors requiring  
high speed and low gate drive power. This type can be  
operated directly from integrated circuits.  
• Photo Current  
- 12nA Per-RAD(Si)/s Typically  
• Neutron  
- Maintain Pre-RAD Specifications  
for 1E13 Neutrons/cm  
2
2
- Usable to 1E14 Neutrons/cm  
Reliability screening is available as either commercial, TXV  
equivalent of MIL-S-19500, or Space equivalent of  
MIL-S-19500. Contact Intersil for any desired deviations  
from the data sheet.  
Ordering Information  
RAD LEVEL  
SCREENING LEVEL  
Commercial  
TXV  
PART NO./BRAND  
10K  
FSF250D1  
FSF250D3  
FSF250R1  
FSF250R3  
FSF250R4  
10K  
Symbol  
D
100K  
100K  
100K  
Commercial  
TXV  
Space  
G
Formerly available as type TA17657.  
S
Package  
TO-254AA  
G
S
D
CAUTION: Beryllia Warning per MIL-S-19500  
refer to package specifications.  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 4046.3  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 19939-107  
12345678

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 		24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSF250D3 RENESAS

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 		24A, 200V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, TO-254
FSF250D4 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 24A I(D) | TO-254AA
FSF250R INTERSIL

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 		24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSF250R1 INTERSIL

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 		24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSF250R1 RENESAS

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 		24A, 200V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, TO-254
FSF250R3 INTERSIL

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 		24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSF250R3 RENESAS

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 		24A, 200V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, TO-254
FSF250R4 INTERSIL

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 		24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSF250R4 RENESAS

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 		24A, 200V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, TO-254

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