Datasheet > FSF254R4

FSF254R4

更新时间： 2024-11-10 22:32:11

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	48K
描述
18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FSF254R4 数据手册

FSF254D, FSF254R

18A, 250V, 0.170 Ohm, Rad Hard,

SEGR Resistant, N-Channel Power MOSFETs

June 1998

Features

Description

• 18A, 250V, r

• Total Dose

= 0.170Ω

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

DS(ON)

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

tions. Enhanced Power MOSFET immunity to Single Event

Effects (SEE), Single Event Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacriﬁced.

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

• Photo Current

- 15nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Commercial

TXV

FSF254D1

FSF254D3

FSF254R1

FSF254R3

FSF254R4

10K

Symbol

100K

Commercial

TXV

Space

Formerly available as type TA17658.

Package

TO-254AA

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 3972.3

3-113

12 3 4 5 6 7 8

中文翻译

下载PDF

与FSF254R4相关器件

型号	品牌	获取价格	描述	数据表
FSF2606	MICROSEMI	获取价格	Small Signal Field-Effect Transistor, TO-254, 3 PIN
FSF351D	SANYO	获取价格	5-PHASE STEPPING SYSTEMS
FSF351D-GX10	SANYO	获取价格	5-PHASE STEPPING SYSTEMS
FSF351D-GX20	SANYO	获取价格	5-PHASE STEPPING SYSTEMS
FSF351D-GX3.6	SANYO	获取价格	5-PHASE STEPPING SYSTEMS
FSF351D-GX30	SANYO	获取价格	5-PHASE STEPPING SYSTEMS
FSF351D-GX50	SANYO	获取价格	5-PHASE STEPPING SYSTEMS
FSF351D-GX7.2	SANYO	获取价格	5-PHASE STEPPING SYSTEMS
FSF351D-HX100	SANYO	获取价格	5-PHASE STEPPING SYSTEMS
FSF351D-HX50	SANYO	获取价格	5-PHASE STEPPING SYSTEMS

与FSF254R4相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

FSF254R4

FSF254R4 数据手册

与FSF254R4相关器件

与FSF254R4相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FSF254R4

FSF254R4 数据手册

与FSF254R4相关器件

与FSF254R4相关文章

您还可以找

您在本页遇到什么问题？