Datasheet > FSF055R1

FSF055R1

更新时间： 2024-11-10 22:17:27

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
8页	50K
描述
25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FSF055R1 数据手册

FSF055D, FSF055R

25A, 60V, 0.020 Ohm, Rad Hard,

SEGR Resistant, N-Channel Power MOSFETs

June 1998

Features

Description

• 25A, 60V, r

• Total Dose

= 0.020Ω

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

DS(ON)

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

tions. Enhanced Power MOSFET immunity to Single Event

Effects (SEE), Single Event Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacriﬁced.

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

• Photo Current

- 6.0nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Commercial

TXV

FSF055D1

FSF055D3

FSF055R1

FSF055R3

FSF055R4

10K

Symbol

100K

Commercial

TXV

Space

Formerly available as type TA17650.

Package

TO-254AA

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 4052.2

3-95

12 3 4 5 6 7 8

中文翻译

下载PDF

与FSF055R1相关器件

型号	品牌	获取价格	描述	数据表
FSF055R3	INTERSIL	获取价格	25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSF055R4	INTERSIL	获取价格	25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSF05A20	NIEC	获取价格	FRD - Low Forward Voltage Drop
FSF05A20	KYOCERA AVX	获取价格	Fast recovery diodes are PN junction diodes with the same structure and function as genera
FSF05A20B	NIEC	获取价格	FRD - Low Forward Voltage Drop
FSF05A20B	KYOCERA AVX	获取价格	Fast recovery diodes are PN junction diodes with the same structure and function as genera
FSF05A40	NIEC	获取价格	FRD
FSF05A40	KYOCERA AVX	获取价格	Fast recovery diodes are PN junction diodes with the same structure and function as genera
FSF05A40B	NIEC	获取价格	FRD - Low Forward Voltage Drop
FSF05A40B	KYOCERA AVX	获取价格	Fast recovery diodes are PN junction diodes with the same structure and function as genera

与FSF055R1相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

FSF055R1

FSF055R1 数据手册

与FSF055R1相关器件

与FSF055R1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FSF055R1

FSF055R1 数据手册

与FSF055R1相关器件

与FSF055R1相关文章

您还可以找

您在本页遇到什么问题？