Datasheet > FSF055D3

FSF055D3

更新时间： 2024-11-10 22:17:27

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	50K
描述
25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FSF055D3 数据手册

FSF055D, FSF055R

25A, 60V, 0.020 Ohm, Rad Hard,

SEGR Resistant, N-Channel Power MOSFETs

June 1998

Features

Description

• 25A, 60V, r

• Total Dose

= 0.020Ω

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

DS(ON)

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

tions. Enhanced Power MOSFET immunity to Single Event

Effects (SEE), Single Event Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacriﬁced.

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

• Photo Current

- 6.0nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Commercial

TXV

FSF055D1

FSF055D3

FSF055R1

FSF055R3

FSF055R4

10K

Symbol

100K

Commercial

TXV

Space

Formerly available as type TA17650.

Package

TO-254AA

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 4052.2

3-95

12 3 4 5 6 7 8

中文翻译

下载PDF

与FSF055D3相关器件

型号	品牌	获取价格	描述	数据表
FSF055D4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 25A I(D) \| TO-254AA
FSF055R	INTERSIL	获取价格	25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSF055R1	INTERSIL	获取价格	25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSF055R3	INTERSIL	获取价格	25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSF055R4	INTERSIL	获取价格	25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSF05A20	NIEC	获取价格	FRD - Low Forward Voltage Drop
FSF05A20	KYOCERA AVX	获取价格	Fast recovery diodes are PN junction diodes with the same structure and function as genera
FSF05A20B	NIEC	获取价格	FRD - Low Forward Voltage Drop
FSF05A20B	KYOCERA AVX	获取价格	Fast recovery diodes are PN junction diodes with the same structure and function as genera
FSF05A40	NIEC	获取价格	FRD

与FSF055D3相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

FSF055D3

FSF055D3 数据手册

与FSF055D3相关器件

与FSF055D3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FSF055D3

FSF055D3 数据手册

与FSF055D3相关器件

与FSF055D3相关文章

您还可以找

您在本页遇到什么问题？