品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | 开关 | |
页数 | 文件大小 | 规格书 |
4页 | 43K | |
描述 | ||
HIGH-SPEED SWITCHING USE |
生命周期: | Transferred | 零件包装代码: | SFM |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.34 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 70 A | 最大漏极电流 (ID): | 70 A |
最大漏源导通电阻: | 0.017 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 125 W | 最大脉冲漏极电流 (IDM): | 280 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS70UMJ-2-A8 | RENESAS |
获取价格 |
High-Speed Switching Use Nch Power MOS FET | |
FS70VS03 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB | |
FS70VS-03 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Met | |
FS70VS-03 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Met | |
FS70VS06 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | TO-263AB | |
FS70VS-06 | POWEREX |
获取价格 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE | |
FS70VS-06 | MITSUBISHI |
获取价格 |
HIGH-SPEED SWITCHING USE | |
FS70VS-06 | RENESAS |
获取价格 |
MITSUBISHI Nch POWER MOSFET | |
FS70VS-06-T1 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me | |
FS70VS-06-T2 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me |