FS4KM-12

更新时间： 2024-11-23 22:16:15

品牌	Logo	应用领域
POWEREX		晶体开关晶体管功率场效应晶体管脉冲局域网
页数	文件大小	规格书
4页	53K
描述
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FS4KM-12 数据手册

MITSUBISHI Nch POWER MOSFET

FS4KM-12

HIGH-SPEED SWITCHING USE

FS4KM-12

OUTLINE DRAWING

Dimensions in mm

10 ± 0.3

2.8 ± 0.2

φ 3.2 ± 0.2

1.1 ± 0.2

0.75 ± 0.15

2.54 ± 0.25

0.75 ± 0.15

2.54 ± 0.25

1 2 3

q GATE

w DRAIN

e SOURCE

¡VDSS ................................................................................600V

¡rDS (ON) (MAX) ................................................................ 2.6Ω

¡ID ............................................................................................ 4A

¡Viso ................................................................................ 2000V

TO-220FN

APPLICATION

SMPS, DC-DC Converter, battery charger, power

supply of printer, copier, HDD, FDD, TV, VCR, per-

sonal computer etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol

VDSS

VGSS

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Conditions

Ratings

Unit

VGS = 0V

VDS = 0V

600

±30

IDM

Drain current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Isolation voltage

°C

Vrms

Tch

–55 ~ +150

2000

Tstg

Viso

—

AC for 1minute, Terminal to case

Typical value

Weight

2.0

Feb.1999

12 3 4

中文翻译

下载PDF

与FS4KM-12相关器件

型号	品牌	获取价格	描述	数据表
FS4KM-12A	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE(10V DRIVE,VDSS-600V,
FS4R12K4	ETC	获取价格	IGBT Module
FS4UM12	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 4A I(D) \| TO-220AB
FS4UM-12	POWEREX	获取价格	Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS4UM-12	RENESAS	获取价格	MITSUBISHI Nch POWER MOSFET
FS4VS12	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 4A I(D) \| TO-263AB
FS4VS-12	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE
FS4VS-12	POWEREX	获取价格	Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS4VS-12	RENESAS	获取价格	MITSUBISHI Nch POWER MOSFET
FS4VS-12-T1	MITSUBISHI	获取价格	Power Field-Effect Transistor, 4A I(D), 600V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal