FS4UM-12

更新时间： 2024-11-23 22:16:55

品牌	Logo	应用领域
POWEREX		晶体开关晶体管功率场效应晶体管脉冲局域网
页数	文件大小	规格书
4页	51K
描述
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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数据手册

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FS4UM-12 数据手册

MITSUBISHI Nch POWER MOSFET

FS4UM-12

HIGH-SPEED SWITCHING USE

FS4UM-12

OUTLINE DRAWING

Dimensions in mm

4.5

1.3

10.5MAX.

φ 3.6

1.0

0.8

2.54

0.5

2.6

w e

w r

q GATE

w DRAIN

e SOURCE

r DRAIN

¡VDSS ................................................................................600V

¡rDS (ON) (MAX) ................................................................ 2.6Ω

¡ID ............................................................................................ 4A

TO-220

APPLICATION

SMPS, DC-DC Converter, battery charger, power

supply of printer, copier, HDD, FDD, TV, VCR, per-

sonal computer etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol

VDSS

VGSS

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Conditions

Ratings

Unit

VGS = 0V

VDS = 0V

600

±30

IDM

Drain current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Weight

°C

Tch

–55 ~ +150

2.0

Tstg

—

Typical value

Feb.1999

12 3 4

中文翻译

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与FS4UM-12相关器件

型号	品牌	获取价格	描述	数据表
FS4VS12	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 4A I(D) \| TO-263AB
FS4VS-12	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE
FS4VS-12	POWEREX	获取价格	Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS4VS-12	RENESAS	获取价格	MITSUBISHI Nch POWER MOSFET
FS4VS-12-T1	MITSUBISHI	获取价格	Power Field-Effect Transistor, 4A I(D), 600V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal
FS4VS-12-T2	MITSUBISHI	获取价格	Power Field-Effect Transistor, 4A I(D), 600V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal
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FS5000	AEROFLEX	获取价格	Fast Switching Synthesizer
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