Datasheet > FS150R17KE3G

FS150R17KE3G

更新时间： 2024-11-23 11:57:15

品牌	Logo	应用领域
EUPEC		晶体二极管晶体管双极性晶体管栅局域网
页数	文件大小	规格书
8页	343K
描述
EconoPACK module with trench/fieldstop IGBT and EmCon3 diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FS150R17KE3G 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FS150R17KE3G

EconoPACK™+ Modul mit Trench/Feldstop IGBT³ und EmCon3 Diode

EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode

IGBT-Wechselrichter / IGBT-inverter

Vorläufige Daten / preliminary data

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

1700

Kollektor-Dauergleichstrom

DC-collector current

T† = 80°C, TÝÎ = 150°C

T† = 25°C, TÝÎ = 150°C

I† ÒÓÑ

I†

150

240

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms

I†ç¢

PÚÓÚ

300

1050

+/-20

Gesamt-Verlustleistung

total power dissipation

T† = 25°C, TÝÎ = 150°C

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 150 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C

2,00 2,45

2,40

V†Š ÙÈÚ

V•ŠÚÌ

Q•

Gate-Schwellenspannung

gate threshold voltage

I† = 6,00 mA, V†Š = V•Š, TÝÎ = 25°C

V•Š = -15 V ... +15 V

5,2

5,8

1,70

3,2

6,4

µC

Gateladung

gate charge

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 1700 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

13,5

0,45

Rückwirkungskapazität

reverse transfer capacitance

CØþÙ

I†Š»

Kollektor-Emitter Reststrom

collector-emitter cut-off current

3,0

Gate-Emitter Reststrom

gate-emitter leakage current

I•Š»

tÁ ÓÒ

400

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 150 A, V†Š = 900 V

V•Š = ±15 V

R•ÓÒ = 9,1 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,28

0,30

µs

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 150 A, V†Š = 900 V

V•Š = ±15 V

R•ÓÒ = 9,1 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,05

0,066

µs

tØ

tÁ ÓËË

tË

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 150 A, V†Š = 900 V

V•Š = ±15 V

R•ÓËË = 9,1 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,81

1,00

µs

Fallzeit (induktive Last)

fall time (inductive load)

I† = 150 A, V†Š = 900 V

V•Š = ±15 V

R•ÓËË = 9,1 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,18

0,30

µs

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 150 A, V†Š = 900 V

V•Š = ±15 V, L» = 80 nH

R•ÓÒ = 9,1 Â

TÝÎ = 25°C

TÝÎ = 125°C

33,0

48,0

EÓÒ

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 150 A, V†Š = 900 V

V•Š = ±15 V, L» = 80 nH

R•ÓËË = 9,1 Â

TÝÎ = 25°C

TÝÎ = 125°C

32,0

47,0

EÓËË

Kurzschlussverhalten

SC data

t« ù 10 µs, V•Š ù 15 V

TÝÎ = 125°C, V†† = 1000 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

I»†

600

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT

per IGBT

RÚÌœ†

0,12 K/W

K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

pro IGBT / per IGBT

ð«ÈÙÚþ = 1 W/(m·K)

RÚÌ†™

0,047

ðÃØþÈÙþ = 1 W/(m·K)

prepared by: Martin Wölz

date of publication: 2004-11-2

revision: 2.1

approved by: Wilhelm Rusche

12 3 4 5 6 7 8

中文翻译

下载PDF

与FS150R17KE3G相关器件

型号	品牌	获取价格	描述	数据表
FS150R17KE3GBOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 240A I(C), 1700V V(BR)CES, N-Channel, ECONOPACK-29
FS150R17N3E4	INFINEON	获取价格	EconoPACK™ 3 1700 V，150 A 六单元 IGBT 模块，采用第四代快速
FS150R17N3E4_B11	INFINEON	获取价格	PressFIT
FS150R17N3E4B11BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor
FS150R17N3E4BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES
FS150R17PE4	INFINEON	获取价格	EconoPACK?4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT /
FS150R17PE4BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-20
FS152	LITTELFUSE	获取价格	See datasheet for operation details.
FS152-30	LITTELFUSE	获取价格	See datasheet for operation details.
FS152-60	LITTELFUSE	获取价格	See datasheet for operation details.

与FS150R17KE3G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

FS150R17KE3G

FS150R17KE3G 数据手册

与FS150R17KE3G相关器件

与FS150R17KE3G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FS150R17KE3G

FS150R17KE3G 数据手册

与FS150R17KE3G相关器件

与FS150R17KE3G相关文章

您还可以找

您在本页遇到什么问题？