是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.73 | Is Samacsys: | N |
其他特性: | RADIATION HARDENED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 8 A |
最大漏极电流 (ID): | 8 A | 最大漏源导通电阻: | 0.18 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-205AF |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 25 W |
最大功率耗散 (Abs): | 25 W | 最大脉冲漏极电流 (IDM): | 24 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 345 ns | 最大开启时间(吨): | 245 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FRL130H2 | RENESAS |
获取价格 |
8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | |
FRL130H3 | RENESAS |
获取价格 |
8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | |
FRL130H4 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF | |
FRL130R | INTERSIL |
获取价格 |
8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs | |
FRL130R1 | RENESAS |
获取价格 |
8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | |
FRL130R2 | RENESAS |
获取价格 |
8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | |
FRL130R3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF | |
FRL130R4 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF | |
FRL1-330-JB | RCD |
获取价格 |
General Purpose Inductor, 33uH, 5%, 1 Element, Ferrite-Core, RADIAL LEADED | |
FRL1-330-JBQ | RCD |
获取价格 |
General Purpose Inductor, 33uH, 5%, 1 Element, Ferrite-Core, RADIAL LEADED |