是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.73 | 其他特性: | RADIATION HARDENED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 8 A | 最大漏极电流 (ID): | 8 A |
最大漏源导通电阻: | 0.18 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-205AF | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 25 W | 最大功率耗散 (Abs): | 25 W |
最大脉冲漏极电流 (IDM): | 24 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 345 ns |
最大开启时间(吨): | 245 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FRL130H4 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF | |
FRL130R | INTERSIL |
获取价格 |
8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs | |
FRL130R1 | RENESAS |
获取价格 |
8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | |
FRL130R2 | RENESAS |
获取价格 |
8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | |
FRL130R3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF | |
FRL130R4 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF | |
FRL1-330-JB | RCD |
获取价格 |
General Purpose Inductor, 33uH, 5%, 1 Element, Ferrite-Core, RADIAL LEADED | |
FRL1-330-JBQ | RCD |
获取价格 |
General Purpose Inductor, 33uH, 5%, 1 Element, Ferrite-Core, RADIAL LEADED | |
FRL1-330-JBW | RCD |
获取价格 |
General Purpose Inductor, 33uH, 5%, 1 Element, Ferrite-Core, RADIAL LEADED, ROHS COMPLIANT | |
FRL1330KB | RCD |
获取价格 |
1 ELEMENT, 33uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, RADIAL LEADED |