Datasheet > FQPF13N50CSDTU

FQPF13N50CSDTU

更新时间： 2025-09-15 19:25:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	927K
描述
通孔N通道500V13A（Tc）48W（Tc）TO-220F-3

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FQPF13N50CSDTU 数据手册

QFET

FQP13N50C/FQPF13N50C

500V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction, electronic lamp ballasts

based on half bridge topology.

•

13A, 500V, R

= 0.48Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 43 nC)

Low Crss ( typical 20pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

TO-220F

FQPF Series

TO-220

FQP Series

G D

D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQP13N50C

FQPF13N50C

500

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

13 *

8 *

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

52 *

Gate-Source Voltage

± 30

860

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

19.5

4.5

V/ns

dv/dt

Power Dissipation (T = 25°C)

195

- Derate above 25°C

Operating and Storage Temperature Range

1.56

0.39

W/°C

°C

T , T

-55 to +150

300

STG

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

FQP13N50C

0.64

FQPF13N50C

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

2.58

θJC

0.5

θJS

62.5

θJA

Rev. A, April 2003

12 3 4 5 6 7...10

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