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FOD8343R2

更新时间： 2024-10-28 11:10:11
品牌 Logo 应用领域
安森美 - ONSEMI 栅输出元件光电
页数 文件大小 规格书
17页 343K
描述
4.0 A Output Current, High Speed Gate Drive Optocoupler in Stretched Body SOP 6-Pin

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FOD8343R2 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SOP-6Reach Compliance Code：compliant
风险等级：2.13其他特性：UL APPROVED
配置：SINGLE最大正向电流：0.025 A
最大绝缘电压：5000 VJESD-609代码：e3
元件数量：1最高工作温度：100 °C
最低工作温度：-40 °C光电设备类型：LOGIC IC OUTPUT OPTOCOUPLER
最小供电电压：10 V端子面层：Tin (Sn)
Base Number Matches：1

FOD8343R2 数据手册

 浏览型号FOD8343R2的Datasheet PDF文件第2页浏览型号FOD8343R2的Datasheet PDF文件第3页浏览型号FOD8343R2的Datasheet PDF文件第4页浏览型号FOD8343R2的Datasheet PDF文件第5页浏览型号FOD8343R2的Datasheet PDF文件第6页浏览型号FOD8343R2的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
4.0 A Output Current,  
High Speed Gate Drive  
Optocoupler in Stretched  
Body SOP 6-Pin  
SOIC6  
CASE 751EL  
SOIC6 W  
CASE 751EM  
FOD8343, FOD8343T  
MARKING DIAGRAM  
Description  
ON  
The FOD8343 series is a 4.0 A maximum peak output current gate  
drive optocoupler, capable of driving medium−power IGBT /  
MOSFETs. It is ideally suited for fast−switching driving of power  
IGBT and MOSFET used in motor−control inverter applications, and  
high−performance power systems.  
8343  
VXXYYP  
8343 = Device Number  
V
= DIN EN/IEC60747−5−5 Option (Only Appears  
on Component Ordered with this Option)  
The FOD8343 series utilizes stretched body package to achieve  
8 mm creepage and clearance distances (FOD8343T), and optimized  
IC design to achieve reliably high−insulation voltage and high−noise  
immunity.  
XX = Two Digit Year Code, e.g. ‘15’  
YY = Two Digit Work Week Ranging from ‘01’ to ‘53’  
P
= Assembly Package Code  
The FOD8343 series consists of an Aluminum Gallium Arsenide  
(AlGaAs) Light−Emitting Diode (LED) optically coupled to an  
integrated circuit with a high−speed driver for push−pull MOSFET  
output stage. The device is housed in a stretched body, 6−pin, small  
outline, plastic package.  
FUNCTIONAL SCHEMATIC  
ANODE  
1
2
3
6
5
4
VDD  
Features  
VO  
• FOD8343T − 8 mm Creepage and Clearance Distance, and 0.4 mm  
Insulation Distance to Achieve Reliable and High−Voltage Insulation  
• 4.0 A Maximum Peak Output Current Driving Capability for  
CATHODE  
VSS  
Medium−Power IGBT/MOSFET  
♦ Use of P−Channel MOSFETs at Output Stage Enables Output  
Voltage Swing Close to Supply Rail  
• 50 kV/ms Minimum Common Mode Rejection Wide Supply Voltage  
Range: 10 V to 30 V  
ORDERING INFORMATION  
• Fast Switching Speed Over Full Operating Temperature Range  
See detailed ordering and shipping information on page 14 of  
this data sheet.  
♦ 210 ns Maximum Propagation Delay  
♦ 65 ns Maximum Pulse Width Distortion Under−Voltage Lockout  
(UVLO) with Hysteresis  
• Extended Industrial Temperate Range: −40°C to 100°C  
Related Resources  
• Safety and Regulatory Approvals:  
♦ UL1577, 5,000 VRMS for 1 Minute  
♦ DIN EN/IEC60747−5−5, 1,140 V Peak Working Insulation  
Voltage  
• FOD3182, 3 A Output Current, High Speed  
MOSFET Gate Drive Optocoupler  
• FOD8314, FOD8314T, 1.0 A Output  
Current, Gate Drive Optocoupler in  
Stretched Body SOP 6−Pin  
Application  
• AC and Brushless DC Motor Drives  
• Industrial Inverter  
• Uninterruptible Power Supply Induction Heating  
• Isolated IGBT/Power MOSFET Gate Drive  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
November, 2022 − Rev. 2  
FOD8343/D  
1234567...17

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