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FOD8343TR2 PDF预览

FOD8343TR2

更新时间: 2024-10-28 11:10:11
品牌 Logo 应用领域
安森美 - ONSEMI 输出元件光电
页数 文件大小 规格书
17页 343K
描述
4.0 A Output Current, High Speed Gate Drive Optocoupler in Stretched Body SOP 6-Pin

FOD8343TR2 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SOP-6Reach Compliance Code:compliant
Factory Lead Time:11 weeks风险等级:2.17
Samacsys Description:4.0 A Output Current, High Speed Gate Drive Optocoupler in Stretched Body SOP 6-Pin其他特性:UL APPROVED
配置:SINGLE最大正向电流:0.025 A
最大绝缘电压:5000 VJESD-609代码:e3
元件数量:1最高工作温度:100 °C
最低工作温度:-40 °C光电设备类型:LOGIC IC OUTPUT OPTOCOUPLER
最小供电电压:10 V端子面层:Tin (Sn)

FOD8343TR2 数据手册

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DATA SHEET  
www.onsemi.com  
4.0 A Output Current,  
High Speed Gate Drive  
Optocoupler in Stretched  
Body SOP 6-Pin  
SOIC6  
CASE 751EL  
SOIC6 W  
CASE 751EM  
FOD8343, FOD8343T  
MARKING DIAGRAM  
Description  
ON  
The FOD8343 series is a 4.0 A maximum peak output current gate  
drive optocoupler, capable of driving medium−power IGBT /  
MOSFETs. It is ideally suited for fast−switching driving of power  
IGBT and MOSFET used in motor−control inverter applications, and  
high−performance power systems.  
8343  
VXXYYP  
8343 = Device Number  
V
= DIN EN/IEC60747−5−5 Option (Only Appears  
on Component Ordered with this Option)  
The FOD8343 series utilizes stretched body package to achieve  
8 mm creepage and clearance distances (FOD8343T), and optimized  
IC design to achieve reliably high−insulation voltage and high−noise  
immunity.  
XX = Two Digit Year Code, e.g. ‘15’  
YY = Two Digit Work Week Ranging from ‘01’ to ‘53’  
P
= Assembly Package Code  
The FOD8343 series consists of an Aluminum Gallium Arsenide  
(AlGaAs) Light−Emitting Diode (LED) optically coupled to an  
integrated circuit with a high−speed driver for push−pull MOSFET  
output stage. The device is housed in a stretched body, 6−pin, small  
outline, plastic package.  
FUNCTIONAL SCHEMATIC  
ANODE  
1
2
3
6
5
4
VDD  
Features  
VO  
FOD8343T − 8 mm Creepage and Clearance Distance, and 0.4 mm  
Insulation Distance to Achieve Reliable and High−Voltage Insulation  
4.0 A Maximum Peak Output Current Driving Capability for  
CATHODE  
VSS  
Medium−Power IGBT/MOSFET  
Use of P−Channel MOSFETs at Output Stage Enables Output  
Voltage Swing Close to Supply Rail  
50 kV/ms Minimum Common Mode Rejection Wide Supply Voltage  
Range: 10 V to 30 V  
ORDERING INFORMATION  
Fast Switching Speed Over Full Operating Temperature Range  
See detailed ordering and shipping information on page 14 of  
this data sheet.  
210 ns Maximum Propagation Delay  
65 ns Maximum Pulse Width Distortion Under−Voltage Lockout  
(UVLO) with Hysteresis  
Extended Industrial Temperate Range: −40°C to 100°C  
Related Resources  
Safety and Regulatory Approvals:  
UL1577, 5,000 VRMS for 1 Minute  
DIN EN/IEC60747−5−5, 1,140 V Peak Working Insulation  
Voltage  
FOD3182, 3 A Output Current, High Speed  
MOSFET Gate Drive Optocoupler  
FOD8314, FOD8314T, 1.0 A Output  
Current, Gate Drive Optocoupler in  
Stretched Body SOP 6−Pin  
Application  
AC and Brushless DC Motor Drives  
Industrial Inverter  
Uninterruptible Power Supply Induction Heating  
Isolated IGBT/Power MOSFET Gate Drive  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
November, 2022 − Rev. 2  
FOD8343/D  

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